Inchange Semiconductor Product Specification 3DD200 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High collector-base breakdown voltage : VCBO=250V APPLICATIONS ・For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER D N O IC R O T UC VALUE UNIT Open emitter 250 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 6 V 3 A 30 W EM S E G N A H Collector-base voltage INC CONDITIONS IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.5 ℃/W TC=75℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 3DD200 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain tf 体 导 半 固电 Fall time CONDITIONS IC=2A ; VCE=5V A H C IN 2 TYP. MAX R O T UC D N O IC IC=3A; IB1=0.2A; IB2=-0.3A EM S E NG MIN 30 UNIT 120 1 μs Inchange Semiconductor Product Specification 3DD200 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3