ISC 3DD200

Inchange Semiconductor
Product Specification
3DD200
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High collector-base breakdown voltage
: VCBO=250V
APPLICATIONS
・For TV horizontal output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
体
导
半
Absolute maximum ratings(Ta=℃)
固电
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
D
N
O
IC
R
O
T
UC
VALUE
UNIT
Open emitter
250
V
Collector-emitter voltage
Open base
100
V
Emitter-base voltage
Open collector
6
V
3
A
30
W
EM
S
E
G
N
A
H
Collector-base voltage
INC
CONDITIONS
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.5
℃/W
TC=75℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
3DD200
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
250
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=250V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
tf
体
导
半
固电
Fall time
CONDITIONS
IC=2A ; VCE=5V
A
H
C
IN
2
TYP.
MAX
R
O
T
UC
D
N
O
IC
IC=3A; IB1=0.2A; IB2=-0.3A
EM
S
E
NG
MIN
30
UNIT
120
1
μs
Inchange Semiconductor
Product Specification
3DD200
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3