SavantIC Semiconductor Product Specification 2SC3250 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For TV video output amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICP Collector current-peak 0.2 A PC Collector power dissipation 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3250 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA ;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V hFE-1 DC current gain IC=5mA ; VCE=50V 50 hFE-2 DC current gain IC=30mA ; VCE=10V 30 COB Collector output capacitance IE=0; VCB=30V,f=1MHz Transition frequency IE=-20mA ; VCB=30V fT 2 250 5.0 70 100 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3250