SAVANTIC 2SC2611

SavantIC Semiconductor
Product Specification
2SC2611
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High breakdown voltage
APPLICATIONS
·For high voltage amplifier TV video
output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
0.1
A
1.25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Ta=25
SavantIC Semiconductor
Product Specification
2SC2611
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA;RBE=6
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=10µA; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10µA; IC=0
5
V
VCE(sat)
Collector-emitter saturation voltage
IC=20mA; IB=2mA
1.5
V
ICEO
Collector cut-off current
VCE=250V; RBE=6
1.0
µA
hFE
DC current gain
IC=20mA ; VCE=20V
30
Transition frequency
IC=20mA ; VCE=20V
50
Collector output capacitance
IE=0 ; VCB=20V;f=1MHz
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
80
MHz
4.0
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2611