SAVANTIC 2SC1756

SavantIC Semiconductor
Product Specification
2SC1756
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
APPLICATIONS
·For TV chroma,video ,audio
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
0.2
A
ICM
Collector current-peak
0.7
A
PC
Collector power dissipation
Ta=25
1.2
TC=25
15
W
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
SavantIC Semiconductor
Product Specification
2SC1756
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
2.0
V
ICBO
Collector cut-off current
VCB=200V ;IE=0
0.1
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
µA
hFE
DC current gain
IC=10mA ; VCE=10V
40
Transition frequency
IC=10mA ; VCE=30V
50
Collector output capacitance
f=1MHz;VCB=50V
fT
COB
CONDITIONS
hFE classifications
C
D
E
40-80
60-120
100-200
2
MIN
TYP.
MAX
300
UNIT
V
200
MHz
5.3
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC1756
SavantIC Semiconductor
Product Specification
2SC1756
Silicon NPN Power Transistors
4