SAVANTIC 2SC3144

SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SC3144
DESCRIPTION
·With TO-220C package
·High switching speed
·High DC current gain
·Wide area of safe operation
·Complement to type 2SA1258
APPLICATIONS
·60V/3A for High-Speed Drivers Applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
3
A
ICP
Collector current-Pulse
5
A
PC
Collector power dissipation
TC=25
20
Ta=25
1.75
W
Tj
Junction temperature
125
Tstg
Storage temperature
-55~125
SavantIC Semiconductor
Product Specification
2SC3144
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;RBE=:
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ;IE=0
70
V
VCE(sat)-1
Collector-emitter saturation voltage
IC=1.5A ,IB=3mA
VCE(sat)-2
Collector-emitter saturation voltage
ICBO
UNIT
1.5
V
IC=1.5A ,IB=3mA
2.0
V
Collector cut-off current
VCB=40V, IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=1.5A ; VCE=2V
Transition frequency
IC=1.5A ; VCE=5V
fT
0.9
MAX
2000
200
MHz
0.3
µs
1.2
µs
0.2
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;IB1=-IB2=2m A
RL=20D,VCC=20V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC3144