SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SC3144 DESCRIPTION ·With TO-220C package ·High switching speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1258 APPLICATIONS ·60V/3A for High-Speed Drivers Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 3 A ICP Collector current-Pulse 5 A PC Collector power dissipation TC=25 20 Ta=25 1.75 W Tj Junction temperature 125 Tstg Storage temperature -55~125 SavantIC Semiconductor Product Specification 2SC3144 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=: 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 70 V VCE(sat)-1 Collector-emitter saturation voltage IC=1.5A ,IB=3mA VCE(sat)-2 Collector-emitter saturation voltage ICBO UNIT 1.5 V IC=1.5A ,IB=3mA 2.0 V Collector cut-off current VCB=40V, IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=1.5A ; VCE=2V Transition frequency IC=1.5A ; VCE=5V fT 0.9 MAX 2000 200 MHz 0.3 µs 1.2 µs 0.2 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;IB1=-IB2=2m A RL=20D,VCC=20V 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3144