Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SC3146 DESCRIPTION ·With TO-220C package ·High switching speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1260 APPLICATIONS ·60V/7A for High-Speed Drivers Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 7 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 1.75 W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~125 ℃ Inchange Semiconductor Product Specification 2SC3146 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 70 V VCE(sat)-1 Collector-emitter saturation voltage IC=3.5A ,IB=7mA 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=3.5A ,IB=7mA 2.0 V ICBO Collector cut-off current VCB=40V, IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=3.5A ; VCE=2V 2 MIN 2000 TYP. MAX UNIT Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3146