Inchange Semiconductor Product Specification 2SC3974 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high voltage,and high speed Switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 7 A ICP Collector current (Pulse) 15 A IB Base Collector current (DC) 4 A PC Collector power dissipation Tj Tstg Max.operating junction temperature Storage temperature TC=25℃ 80 Ta=25℃ 3 W 150 ℃ -55~150 ℃ Inchange Semiconductor Product Specification 2SC3974 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V,f=1MHz 20 fT CONDITIONS MIN TYP. MAX 500 UNIT V MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=4A ;IB1=0.8A ,IB2=-1.6A VCC=200V 2 1.0 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3974 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3