SavantIC Semiconductor Product Specification 2SC2923 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation Ta=25 1.4 TC=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2923 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=30mA IB=3m A 1.5 V Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10µA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100µA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10µA; IC=0 7 V hFE DC current gain IC=5mA ; VCE=50V 50 COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IE=20mA ; VCB=30V VBE 2 250 2.4 70 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC2923