SavantIC Semiconductor Product Specification 2SC1514 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High Voltage ·High frequency APPLICATIONS ·TV chroma, video, audio output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation Ta=25 1.25 TC=25 15 W Tj Junction temperature 150 Tstg Storage temperature -40~150 SavantIC Semiconductor Product Specification 2SC1514 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=20mA IB=2m A 1.5 V Base-emitter on voltage IC=20mA ; VCE=20V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10µA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100µA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10µA; IC=0 7 V hFE DC current gain IC=20mA ; VCE=20V 30 COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IE=20mA ; VCB=20V VBE 2 200 4 50 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1514