CNY17 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES 6 • Isolation test voltage: 5000 VRMS A 1 C 2 5 C • Industry standard dual-in-line package NC 3 4 E • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 B • Long term stability AGENCY APPROVALS Safety application model number covering all products in this datasheet is CNY17. This model number should be used when consulting safety agency documents. • UL file no. E52744 i179004-14 DESCRIPTION • cUL tested to CSA 22.2 bulletin 5A The CNY17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. • BSI IEC 60950, IEC 60065 • DIN EN 60747-5-5 (VDE 0884-5) • FIMKO EN60950 Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. • CQC GB8898-2011 The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. ORDERING INFORMATION C N Y 1 7 - # PART NUMBER CTR BIN X 0 # # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE DIP-6 Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 8 mm 8 mm typ. T TAPE AND REEL CTR (%) UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 DIP-6 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1X006 CNY17-2X006 CNY17-3X006 CNY17-4X006 SMD-6, option 7 CNY17-1X007T (1) CNY17-2X007T (1) CNY17-3X007T (1) CNY17-4X007T (1) SMD-6, option 9 CNY17-1X009T (1) CNY17-2X009T (1) CNY17-3X009T (1) CNY17-4X009T (1) 40 to 80 63 to 125 100 to 200 160 to 320 CNY17-1X001 CNY17-2X001 CNY17-3X001 CNY17-4X001 DIP-6, 400 mil, option 6 VDE, UL, cUL, BSI, FIMKO DIP-6 160 to 320 DIP-6, 400 mil, option 6 CNY17-1X016 CNY17-2X016 CNY17-3X016 CNY17-4X016 SMD-6, option 7 CNY17-1X017 CNY17-2X017T (1) CNY17-3X017T (1) CNY17-4X017T (1) SMD-6, option 9 - CNY17-2X019T (1) - - Note (1) Also available in tubes, do not put T on the end. Document Number: 83606 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 2.5 A LED power dissipation at 25 °C Pdiss 100 mW Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7 V IC 50 mA IC 100 mA Pdiss 150 mW OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Power dissipation COUPLER Isolation test voltage between emitter and detector VISO 5000 VRMS Storage temperature t = 1 min Tstg -55 to +150 °C Operating temperature Tamb -55 to +110 °C Tsld 260 °C Pdiss 250 mW 2 mm from case, ≤ 10 s Soldering temperature (1) Total power dissipation Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.39 1.65 V 0.01 10 μA INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 μA VBR VR = 6 V IR Reverse current Capacitance Thermal resistance VR = 0 V, f = 1 MHz 6 V CO 25 pF Rth 750 K/W Document Number: 83606 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION OUTPUT Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Collector emitter, saturation voltage Coupling capacitance Collector emitter, leakage current PART SYMBOL MIN. TYP. VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz CCE CCB CEB Rth 5.2 6.5 7.5 500 VF = 10 mA, IC = 2.5 mA VCEsat CC ICEO ICEO ICEO ICEO 0.25 0.6 2 2 5 5 VCE = 10 V CNY17-1 CNY17-2 CNY17-3 CNY17-4 MAX. UNIT pF pF pF K/W 0.4 50 50 100 100 V pF nA nA nA nA Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 1 mA PART CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR MIN. 40 63 100 160 13 22 34 56 TYP. MAX. 80 125 200 320 UNIT % % % % % % % % MAX. UNIT 30 45 70 90 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION LINEAR OPERATION (without saturation) Turn-on time IF = 10 mA, VCC = 5 V, RL = 75 Ω Rise time IF = 10 mA, VCC = 5 V, RL = 75 Ω Turn-off time IF = 10 mA, VCC = 5 V, RL = 75 Ω Fall time IF = 10 mA, VCC = 5 V, RL = 75 Ω Cut-off frequency IF = 10 mA, VCC = 5 V, RL = 75 Ω SWITCHING OPERATION (with saturation) IF = 20 mA Turn-on time IF = 10 mA IF = 5 mA IF = 20 mA Rise time IF = 10 mA IF = 5 mA IF = 20 mA Turn-off time IF = 10 mA IF = 5 mA IF = 20 mA Fall time IF = 10 mA IF = 5 mA PART CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-1 CNY17-2 CNY17-3 CNY17-4 SYMBOL MIN. TYP. ton tr toff tf fCO 3 2 2.3 2 110 μs μs μs μs kHz ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf 3 4.2 4.2 6 2 3 3 4.6 18 23 23 25 11 14 14 15 μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs Document Number: 83606 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com +5V IF IF Vishay Semiconductors IF 0 0 tp IC R G = 50 Ω tp = 0.01 T t 100 % 90 % t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF 10 % 0 tr RL td ts t on 95 10804-3 Fig. 2 - Test Circuit, Non-Saturated Operation IF tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 +5V I F = 10 mA 0 Fig. 4 - Switching Times IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 3 - Test Circuit, Saturated Operation SAFETY AND INSULATION RATINGS PARAMETER SYMBOL VALUE UNIT Output safety power PSO 700 mW Input safety current ISI 400 mA Safety temperature TSI 175 °C Comparative tracking index CTI 175 MAXIMUM SAFETY RATINGS INSULATION RATED PARAMETERS Maximum withstanding isolation voltage VISO 5000 Maximum transient isolation voltage VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage VIORM 890 Vpeak VRMS Insulation resistance Tamb = 25 °C, VDC = 500 V RIO ≥ 1012 Ω Isolation resistance Tamb = 100 °C, VDC = 500 V RIO ≥ 1011 Ω Climatic classification (according to IEC 68 part 1) 55/115/21 Environment (pollution degree in accordance to DIN VDE 0109) Creepage distance Clearance distance Insulation thickness 2 Standard DIP-4 ≥7 mm SMD ≥7 mm Standard DIP-4 ≥8 mm SMD ≥8 mm ≥ 0.4 mm DTI Note • As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Document Number: 83606 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com Vishay Semiconductors 1.8 1.7 Tamb = 25 °C 1.6 Tamb = 0 °C 1.5 1.4 Tamb = - 25 °C 1.3 T = - 55 °C amb 1.2 1.1 Tamb = 50 °C 1.0 Tamb = 75 °C 0.9 Tamb = 100 °C 0.8 0.7 Tamb = 110 °C 0.6 0.1 1 10 100 10 000 IF = 0 mA ICE0 - Leakage Current (nA) VF - Forward Voltage (V) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 100 VCE = 24 V 10 VCE = 12 V 1 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 120 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Forward Current Fig. 8 - Leakage Current vs. Ambient Temperature 60 1.2 CTRNorm - Normalized CTR (NS) IC - Collector Current (mA) VCE = 40 V IF = 30 mA 50 40 IF = 20 mA 30 IF = 15 mA 20 IF = 10 mA 10 IF = 5 mA 0 0 1 2 3 4 5 7 6 0.8 0.6 0.4 0.2 0 -60 -40 -20 8 VCE = 5 V IF = 10 mA 1.0 0 20 40 60 80 100 120 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C) Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature 25 IC - Collector Current (mA) 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.1 0 0.2 0.3 0.4 CTRNorm - Normalized CTR (sat) 1.2 IF = 25 mA VCE = 0.4 V IF = 10 mA 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C) Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 10 - Normalized CTR (sat) vs. Ambient Temperature Document Number: 83606 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com 1000 1.2 IF = 10 mA VCE = 5 V fCTR - -3 dB Frequency (kHz) CTRNorm - Normalized CTR (NS) Vishay Semiconductors Tamb = 25 °C 1.0 Tamb = 0 °C 0.8 Tamb = - 40 °C Tamb = - 55 °C 0.6 Tamb = 50 °C Tamb = 75 °C 0.4 Tamb = 100 °C 0.2 VCC = 5 V 100 10 Tamb = 110 °C 0 0.1 1 1 0.1 100 10 1 10 100 IF - Forward Current (mA) IC - Collector Current (mA) Fig. 11 - Normalized CTR (NS) vs. Forward Current Fig. 14 - CTR -3 dB Frequency vs. Collector Current 1000 IF = 10 mA VCE = 0.4 V VCE = 5 V, IF = 10 mA ton, toff - Switching Time (μs) CTRNorm - Normalized CTR (sat) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 50 °C 0.4 Tamb = 75 °C Tamb = 100 °C 0.2 toff 100 10 ton 1 Tamb = 110 °C 0 0.1 1 10 100 0.1 0.1 1 10 100 IF - Forward Current (mA) RL - Load Resistance (kΩ) Fig. 12 - Normalized CTR (sat) vs. Forward Current Fig. 15 - Switching Time vs. Load Resistance 0 VCE = 5 V - 20 Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 - 160 1 10 100 1000 f - Frequency (kHz) Fig. 13 - CTR Frequency vs. Phase Angle Document Number: 83606 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6 5 4 6.5 ± 0.5 1 2 3 7.3 ± 0.5 7.62 ± 0.3 1.1 ± 0.1 3.5 ± 0.3 0.5 typ. 3.3 ± 0.5 2.8 ± 0.5 0.26 0.5 ± 0.1 2.54 ± 0.25 7.62 to 9.98 22530 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 7.62 typ. 3.5 ± 0.3 0.35 ± 0.25 0.1 min. Option 9 0.6 min. 8 min. 2.7 min. 10.16 typ. 0.1 ± 0.1 0.6 min. 3.5 ± 0.3 8.16 ± 0.8 10.16 ± 0.3 10.3 max. 0.76 2.54 R 0.25 0.76 2.54 R 0.25 1.78 8 min. 11.05 20802-34 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING CNY17-3 Pin 1 I.D. V YWW 25 Notes • VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Document Number: 83606 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 CNY17 www.vishay.com Vishay Semiconductors TUBE AND TAPE INFORMATION DEVICES PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-6 50 40 2000 Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 12 ± 0.1 0.3 ± 0.05 22537-1 Fig. 16 - Tape and Reel Drawing, 1000 Units per Reel Document Number: 83606 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.1, 08-Jan-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000