APT90DR160HJ ISOTOP® Rectifier diode full bridge Power Module VRRM = 1600V IF = 90A @ Tc = 80°C Application Input mains rectifier • Features • • • • • • • Planar double passivated chips High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits ~ ~ + • • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current t=10ms TC = 90°C TJ = 45°C Max ratings Unit 1600 V 80 850 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT90DR160HJ – Rev 0 November, 2009 Absolute maximum ratings APT90DR160HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 1600V VF Forward Voltage IF = 90A VT rT On – state Voltage On – state Slope resistance Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 50 4 1.3 1.1 0.8 4.8 Unit µA mA V V mΩ Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.85 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) www.microsemi.com 2-3 APT90DR160HJ – Rev 0 November, 2009 38.0 (1.496) 38.2 (1.504) APT90DR160HJ Typical Performance Curve Forward Characteristic Non-Repetitive Forward Surge Current 1000 180 150 800 TJ=125°C IFSM (A) IF (A) 120 90 TJ=45°C 600 TJ=125°C 400 60 TJ=25°C 0 0.01 0 0.0 0.4 0.8 1.2 50Hz 80% VRRM 200 30 1.6 2.0 0.1 t (s) VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.6 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT90DR160HJ – Rev 0 November, 2009 Rectangular Pulse Duration in Seconds