MICROSEMI APT90DR160HJ

APT90DR160HJ
ISOTOP® Rectifier diode
full bridge Power Module
VRRM = 1600V
IF = 90A @ Tc = 80°C
Application
Input mains rectifier
•
Features
•
•
•
•
•
•
•
Planar double passivated chips
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP® Package (SOT-227)
Benefits
~
~
+
•
•
•
•
•
•
-
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Symbol
VR
VRRM
IF
IFSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
DC Forward Current
Non-Repetitive Forward Surge Current
t=10ms
TC = 90°C
TJ = 45°C
Max ratings
Unit
1600
V
80
850
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-3
APT90DR160HJ – Rev 0 November, 2009
Absolute maximum ratings
APT90DR160HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
IR
Reverse Current
VR = 1600V
VF
Forward Voltage
IF = 90A
VT
rT
On – state Voltage
On – state Slope resistance
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Typ
Max
50
4
1.3
1.1
0.8
4.8
Unit
µA
mA
V
V
mΩ
Thermal and package characteristics
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Characteristic
Junction to Case Thermal resistance
Junction to Ambient
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Typ
Max
0.85
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
www.microsemi.com
2-3
APT90DR160HJ – Rev 0 November, 2009
38.0 (1.496)
38.2 (1.504)
APT90DR160HJ
Typical Performance Curve
Forward Characteristic
Non-Repetitive Forward Surge Current
1000
180
150
800
TJ=125°C
IFSM (A)
IF (A)
120
90
TJ=45°C
600
TJ=125°C
400
60
TJ=25°C
0
0.01
0
0.0
0.4
0.8
1.2
50Hz
80% VRRM
200
30
1.6
2.0
0.1
t (s)
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.8
0.6
0.9
0.7
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3
APT90DR160HJ – Rev 0 November, 2009
Rectangular Pulse Duration in Seconds