an
=y FE
AMP
comDanv
RF MOSFET Power
100 - 500 MHz
Transistor,
4OW, 28V
UF284OP
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
. .
Absolute Maximum Ratings at 25°C
Parameter
Rating
Symbol
Units
i
Electrical Characteristics
D
i
627
i
6.33
1
247
1
257
H
]
1.40
1
165
1
055
1
.D65
J
1
292
I
3.M
I
115
I
325
1
at 25°C
45
pF
Vg28.0
V, F=l .O MHz’
C oss
30
pF
V,,=28.0
V, F=l .O MHz’
C RSS
a
PF
V,,=28.0
V, F=l .O MHz’
10
-
dB
V,,=28.0
V, 1,,=500.0 mA, P,fi40.0
W. F=500 MHz
qD
50
-
%
V,,=28.0
V, 1,,=500.0 mA, Po,,=40.0
W, F=500 MHz
VSWR-T
-
2O:l
-
V,,=28.0
V, 1,,=500.0
W, F=500 MHz
input Capacitance
C ISS
Output Capacitance
Reverse Capacitance
Power Gain
GP
Drain Efficiency
Load Mismatch Tolerance
-
)
mA, P,,g40.0
* Per Side
Specifications Subject to Change Without Notice.
MIA-COM,
North
America:
Tel.
(800)
366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel.
+81 (03) 3226-1671
Fax +81 (03)3226-1451
n
Europe:
Inc.
Tel. +44 (1344)869 595
Fax +44(1344)300 020
RF MOSFET Power Transistor,
U F284OP
4OW, 28V
v2.00
Typical Broadband
Performance
CAPACITANCES
Curves
POWER OUTPUT vs VOLTAGE
vs VOLTAGE
Fz1.0 MHz
10
55
P,,=3.0 W I,,=500
50
40
g
4o
f
L
30
2
5
20
E
10
C RSS
mA F=500 MHz
/
0
5
10
15
20
25
30
10
5
20
15
EFFICIENCY
GAIN vs FREQUENCY
v.,,=28
30
V I,,=500
25
30
35
v,, (“)
"2, (")
mA PO,,=40 W
65
V,,=28
-
vs FREQUENCY
V I,,=500
mA P,,,=40
W
6
c
kii
55.
c
J
200
100
400
3w
FREQUENCY
50
500
.
FREQUENCY
(MHz)
POWER OUTPUT
500
(MHz)
vs POWER INPUT
VD,=28 V I,,=500
60
400
3430
200
loo
mA
1
J
0.1
1
0.25
2
2.5
POWER INPUT (W)
M/A-COM,
Specifications
Subject to Change Without Notice.
Tel. (800)
Fax (800)
366-2266
618-8883
inc.
North America:
n
Asia/Pacific:
Tel.
Fax
+81 (03) 3226-1671
+81 (03) 3226-1451
w
Europe:
Tel.
Fax
+44 (1344)
+44 (1344)
869 595
300 020
UF284OP
4OW, 28V
RF MOSFET Power Transistor,
v2.00
Typical Device Impedance
Frequency
(MHz)
4, (OHMS)
Z LOAD
(OHMS)
100
6.0 - j 20.0
25.0 + j 27.0
300
2.5 - j 5.5
13.0 + j 13.0
500
4.0 + j 3.0
12.0 + j 5.0
V,,=28
Z,, is the series equivalent
‘. T
I,,=500
mA,
P,,,=40.0
Watts
of the device from gate to gate.
input impedance
Z LcADis the optimum series equivalent
V,
load impedance
as measured from drain to drain.
RF Test Fixture
PARTS
c3s
c6
: 2 7.
2 12 13
c7, 9, 10
It 14, 1s
a9
a6
22
22’
Lu 14
Ll2 13
L7, lo
28”
L4
u2
0
L
I
ST
WpF
UJJ PC
la Pf
470 pf
815
uf
10 uf
Louf
SOUfSOV.
lOOW42SV.
270 tl+f ZS V.
2.wlF25oNNsmr-RmDco~
7 TlRdS 5 NO. e2 AVG VIRE
lsTum5ra22AvGvw
x5* ff so m-04 l%NSUSSION UNE
Es’ffsomMTR-uNE
~ff5OpUTRAND(Issar(LIK
35’~50U+MTRCIE(OOSSWLlX
.SVFSOOTR-UN
uf2e4oP
Specifications Subject to Change Without Notice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020