;=-=z 7=-z = ---== =z an AMP company * = .-----= = RF MOSFET Power Transistor, SW, 12V 30 - 90 MHz FH2164 Features l l l l l l N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices Electrical Characteristics at 25°C VD,=28.0 V, F=l .O MHz’ Output Capacitance C ass 40 pF V,,=28.0 V, F=l .O MHz’ Reverse Capacitance C RSS 8 PF V,,=28.0 V, F=l .O MHz’ Power Gain GP 13 - dB VD,=12.0 V, l&j00 Drain Efficiency 90 55 - % V,,=12.0 V, l,Q=600 mA, P,,,=8.0 W, F=88 MHz VSWR-T - 2O:l - V,,=12.0 V, 1,0=600 mA, P0,e8.0 W, F=88 MHz Load Mismatch Tolerance mA, P,,.r=8.0 W, F=88 MHz * Per side Specifications Subject to Change Without Notice. 9-66 North America: M/A-COM, Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 B Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020