an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation Absolute Maximum Ratings at 25°C Electrical Characteristics C oss Reverse Capacitance 0, 1 246 3.61 1 077 4.37 1 J42 .097 1 .I72 PF V,,=28.0 2.4 pF VDs=28.0 V, F=l .O MHz’ 10 - dB V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz 50 - % V,,=28.0 V, I,,=1 00.0 mA, P,& 0.0 W, F=500 MHz - V,,=28.0 V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz 9D Load Mismatch Tolerance 1% 5 - GP Drain Efficiency 1 1 at 25°C Output Capacitance Power Gain L N VSWR-T - 203 V, I==1 .O MHz’ * Per Side pecifications Subject to Change Without Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, UF281 OP iOW, 28V v2.00 Typical Device impedance Frequency (MHz) &., (OHMS) z LOAD (OHMS) 100 30.0 - i 150.0 70.0 + i 110.0 300 15.0 - j 90.0 55.0 + j 80.0 500 4.2 - j 46.0 48.0 + j 50.0 V,,=28 V, l,=jOO mA, P,,?lO.O Watts Z,, is the series equwalent input impedance of the device from gate to gate. Z LOAD is tbe optimum series equivalent load impedance as measured from drain to drain. RF Test Fixture P A R T Cl0 c5 27 PC 30 PF cl ii36 6.8 pr 15 PC 7, a 9 cu. 12 13, 1% 17 us Cl6 SQo PC zL3 Tt 2 L4 3 lo L7, 9 ue l-3, 4 LS,6 01 S L I ST .OfS uf .louf SOUfSOV. loo mr4 P5 v. UK Mw 25 V. 250 5 SO Du SwdIGID COAX 7 TURNS 5 NO. 22 AVG VIRE 1s TURNS 5 NJ. 22 AVG vm 35’ OF SO OHN TRANSNISSIDN IDE .7v 5 50 pE( T-W LINE 1~OFSOOHNlRANSNISSIONLIM lF281OP Specifications Subject to Change Without Notice. MIA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020