AVAGO AT

AT-42085
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’s AT-42085 is a general purpose NPN bipolar
transistor that offers excellent high frequency
performance. The AT-42085 is housed in a low cost .085"
diameter plastic package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications. Applications include use in wireless systems
as an LNA, gain stage, buffer, oscillator, and mixer. An
optimum noise match near 50Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
• High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Low Cost Plastic Package
• Lead-free Option Available
The AT-42085 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
85 Plastic Package
AT-42085 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 7.7 mW/°C for Tc > 85°C.
4. See MEASUREMENTS section “Thermal
Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
|S 21E| 2
Units
Min.
Typ.
Max.
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 1.0 GHz
dB
15.5
17.0
f = 2.0 GHz
11.0
f = 4.0 GHz
5.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm20.5
VCE = 8 V, IC = 35 mA
f= 4.0 GHz20.0
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB2.0
f = 4.0 GHz
3.5
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
13.5
f = 4.0 GHz
9.5
f T
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
—
30
150270
ICBO
Collector Cutoff Current; VCB = 8 V
µA
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
µA2.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.32
Note:
1. For this test, the emitter is grounded.
AT-42085 Typical Performance, TA = 25°C
24
2.0 GHz
12
2.0 GHz
20
4.0 GHz
P1dB
16
12
0
10
20
30
40
8
4
50
G1dB
4.0 GHz
0
10
20
IC (mA)
30
40
4V
P1dB
12
IC (mA)
Figure 1. Insertion Power Gain vs. Collector Current
and Frequency. VCE = 8 V.
24
35
21
MSG
30
18
GAIN (dB)
25
20
MAG
15
|S21E|2
10
GA
15
12
4
9
3
NFO
6
5
3
0
0
0.5
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
2
1
1.0
2.0
G1dB
12
0
10
20
30
40
50
IC (mA)
Figure 2. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. VCE = 8 V.
40
10 V
6V
4V
14
10
50
0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
NFO (dB)
0
GAIN (dB)
6V
16
16
G1 dB (dB)
4.0 GHz
4
10 V
20
2.0 GHz
8
G1 dB (dB)
|S21E|2 GAIN (dB)
16
24
P1 dB (dBm)
1.0 GHz
P1 dB (dBm)
20
Figure 3. Output Power and 1 dB Compressed Gain vs.
Collector Current and Voltage. f = 2.0 GHz.
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
0.1
.72
-5028.526.52
152
-37.0
0.5
.66
-13921.0
11.23
103
-29.2
1.0
.65
-168
15.5
5.96
84
-28.6
1.5
.65
175
12.2
4.06
71
-27.0
2.0
.65
163
9.7
3.06
60
-25.3
2.5
.66
157
8.02.51
55
-24.0
3.0
.68
149
6.32.07
46
-22.8
3.5
.68
141
5.1
1.79
38
-21.4
4.0
.69
133
3.9
1.5729
-19.7
4.5
.69
125
3.0
1.4121
-18.5
5.0
.69
1142.2
1.28
12
-17.1
5.5
.71
103
1.4
1.17
3
-15.9
6.0
.75
91
0.6
1.07
-6
-15.1
S12 S22
Mag.
Ang.
Mag.
.014
73
.90
.035
36
.53
.037
39
.45
.045
46
.43
.054
51
.42
.063
60
.42
.072
65
.41
.085
64
.43
.104
64
.45
.119
63
.46
.139
58
.47
.161
55
.44
.177
49
.40
Ang.
-16
-32
-33
-36
-41
-42
-48
-55
-61
-66
-71
-76
-85
S12 S22
Mag.
Ang.
Mag.
.010
66
.76
.023
52
.38
.034
61
.34
.048
68
.32
.064
66
.31
.075
68
.31
.088
69
.30
.102
67
.31
.117
65
.33
.138
60
.35
.152
56
.35
.171
50
.34
.188
46
.31
Ang.
-26
-30
-28
-31
-36
-40
-48
-58
-67
-73
-79
-85
-96
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
0.1
.54
-90
33.1
45.38
137
-40.1
0.5
.61
-16322.6
13.45
95
-32.8
1.0
.61
178
16.8
6.90
79
-29.5
1.5
.62
167
13.4
4.67
68
-26.4
2.0
.63
156
10.9
3.52
59
-23.9
2.5
.64
152
9.22.89
54
-22.5
3.0
.66
146
7.62.39
45
-21.2
3.5
.67
139
6.32.07
37
-19.8
4.0
.68
131
5.2
1.8128
-18.6
4.5
.68
123
4.2
1.62
19
-17.2
5.0
.68
114
3.4
1.48
10
-16.4
5.5
.71
1032.5
1.34
1
-15.3
6.0
.74
93
1.7
1.21
-8
-14.5
A model for this device is available in the DEVICE MODELS section.
AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
NFO
GHz
dB
0.1
1.1
0.5
1.2
1.0
1.3
2.02.0
4.0
3.5
Mag
.05
.06
.10
.24
.46
Γopt
Ang
16
77
131
-179
-128
RN/50
0.13
0.13
0.12
0.11
0.25
Ordering Information
Part Numbers
AT-42085
AT-42085G
No. of Devices
10
100
Note: Order part number with a “G” suffix if lead-free option
is desired.
85 Plastic Package Dimensions
.020
.51
EMITTER
4
0.143 ± 0.015
3.63 ± 0.38
1
BASE
COLLECTOR
2
EMITTER
.060 ± .010
1.52 ± .25
3
420
45°
.085
2.15
5° TYP.
.07
0.43
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
.286 ± .030
7.36 ± .76
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2655EN
AV02-1219EN May 5, 2008