AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Low Cost Plastic Package • Lead-free Option Available The AT-42085 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package AT-42085 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation [2,3] mW 500 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 7.7 mW/°C for Tc > 85°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions |S 21E| 2 Units Min. Typ. Max. Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.5 17.0 f = 2.0 GHz 11.0 f = 4.0 GHz 5.0 P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm20.5 VCE = 8 V, IC = 35 mA f= 4.0 GHz20.0 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0 f = 4.0 GHz 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB2.0 f = 4.0 GHz 3.5 GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5 f = 4.0 GHz 9.5 f T Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0 hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150270 ICBO Collector Cutoff Current; VCB = 8 V µA 0.2 IEBO Emitter Cutoff Current; VEB = 1 V µA2.0 CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.32 Note: 1. For this test, the emitter is grounded. AT-42085 Typical Performance, TA = 25°C 24 2.0 GHz 12 2.0 GHz 20 4.0 GHz P1dB 16 12 0 10 20 30 40 8 4 50 G1dB 4.0 GHz 0 10 20 IC (mA) 30 40 4V P1dB 12 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 24 35 21 MSG 30 18 GAIN (dB) 25 20 MAG 15 |S21E|2 10 GA 15 12 4 9 3 NFO 6 5 3 0 0 0.5 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 2 1 1.0 2.0 G1dB 12 0 10 20 30 40 50 IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 10 V 6V 4V 14 10 50 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. NFO (dB) 0 GAIN (dB) 6V 16 16 G1 dB (dB) 4.0 GHz 4 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB 0.1 .72 -5028.526.52 152 -37.0 0.5 .66 -13921.0 11.23 103 -29.2 1.0 .65 -168 15.5 5.96 84 -28.6 1.5 .65 175 12.2 4.06 71 -27.0 2.0 .65 163 9.7 3.06 60 -25.3 2.5 .66 157 8.02.51 55 -24.0 3.0 .68 149 6.32.07 46 -22.8 3.5 .68 141 5.1 1.79 38 -21.4 4.0 .69 133 3.9 1.5729 -19.7 4.5 .69 125 3.0 1.4121 -18.5 5.0 .69 1142.2 1.28 12 -17.1 5.5 .71 103 1.4 1.17 3 -15.9 6.0 .75 91 0.6 1.07 -6 -15.1 S12 S22 Mag. Ang. Mag. .014 73 .90 .035 36 .53 .037 39 .45 .045 46 .43 .054 51 .42 .063 60 .42 .072 65 .41 .085 64 .43 .104 64 .45 .119 63 .46 .139 58 .47 .161 55 .44 .177 49 .40 Ang. -16 -32 -33 -36 -41 -42 -48 -55 -61 -66 -71 -76 -85 S12 S22 Mag. Ang. Mag. .010 66 .76 .023 52 .38 .034 61 .34 .048 68 .32 .064 66 .31 .075 68 .31 .088 69 .30 .102 67 .31 .117 65 .33 .138 60 .35 .152 56 .35 .171 50 .34 .188 46 .31 Ang. -26 -30 -28 -31 -36 -40 -48 -58 -67 -73 -79 -85 -96 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. dB 0.1 .54 -90 33.1 45.38 137 -40.1 0.5 .61 -16322.6 13.45 95 -32.8 1.0 .61 178 16.8 6.90 79 -29.5 1.5 .62 167 13.4 4.67 68 -26.4 2.0 .63 156 10.9 3.52 59 -23.9 2.5 .64 152 9.22.89 54 -22.5 3.0 .66 146 7.62.39 45 -21.2 3.5 .67 139 6.32.07 37 -19.8 4.0 .68 131 5.2 1.8128 -18.6 4.5 .68 123 4.2 1.62 19 -17.2 5.0 .68 114 3.4 1.48 10 -16.4 5.5 .71 1032.5 1.34 1 -15.3 6.0 .74 93 1.7 1.21 -8 -14.5 A model for this device is available in the DEVICE MODELS section. AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. NFO GHz dB 0.1 1.1 0.5 1.2 1.0 1.3 2.02.0 4.0 3.5 Mag .05 .06 .10 .24 .46 Γopt Ang 16 77 131 -179 -128 RN/50 0.13 0.13 0.12 0.11 0.25 Ordering Information Part Numbers AT-42085 AT-42085G No. of Devices 10 100 Note: Order part number with a “G” suffix if lead-free option is desired. 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 ± 0.015 3.63 ± 0.38 1 BASE COLLECTOR 2 EMITTER .060 ± .010 1.52 ± .25 3 420 45° .085 2.15 5° TYP. .07 0.43 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .006 ± .002 .15 ± .05 .286 ± .030 7.36 ± .76 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2655EN AV02-1219EN May 5, 2008