BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f tp δ VDS PL Gp RLin ηD Pdroop(pulse) tr tf (MHz) (μs) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) 960 to 1215 128 10 50 25 21 10 58 0.05 8 6 1200 to 1400 300 10 50 25 19 10 50 0.05 8 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLL6H0514-25 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage −0.5 +13 V ID drain current - 2.5 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Typ Unit tp = 100 μs; δ = 10 % 0.86 K/W tp = 200 μs; δ = 10 % 1.11 K/W tp = 300 μs; δ = 10 % 1.29 K/W tp = 100 μs; δ = 20 % 1.15 K/W 5. Thermal characteristics Table 5. BLL6H0514-25_4 Product data sheet Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 °C; PL = 25 W All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 630 mA Min Typ Max Unit 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 2.1 2.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 100 nA gfs forward transconductance VDS = 10 V; ID = 18 mA 120 150 - mS RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 63 mA - 1500 2750 mΩ Table 7. RF characteristics Mode of operation: pulsed RF; tp = 128 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL output power 25 - - W VDS drain-source voltage PL = 25 W - - 50 V Gp power gain PL = 25 W 20 21 - dB RLin input return loss PL = 25 W 10 15 - dB ηD drain efficiency PL = 25 W 57 59 - % Pdroop(pulse) pulse droop power PL = 25 W - 0 0.3 dB tr rise time PL = 25 W - 20 50 ns tf fall time PL = 25 W - 6 50 ns 6.1 Ruggedness in class-AB operation The BLL6H0514-25 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 25 W; f = 1.2 GHz; tp = 128 μs; δ = 10 %. BLL6H0514-25_4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz Ω Ω 950 2.37 + j3.3 6.11 + j11.1 1000 2.44 + j2.65 7.00 + j16.0 1050 2.34 + j2.67 7.39 + j14.2 1100 2.56 + j2.06 7.0 + j16.0 1150 2.54 + j1.70 5.77 + j13.85 1200 2.25 + j1.29 7.39 + j14.2 1300 2.21 + j0.15 6.11 + j11.1 1400 2.46 − j0.52 5.00 + j10.0 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Typical data Table 9. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF BLL6H0514-25_4 Product data sheet f tp δ VDS PL Gp RLin ηD Pdroop(pulse) tr tf (MHz) (μs) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) 960 to 1215 128 10 50 25 21 10 58 0.05 8 6 1200 to 1400 300 10 50 25 19 10 50 0.05 8 6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 7.3 Application circuit C4 C9 C6 C2 C3 C7 C5 C8 C10 C11 R1 C1 C12 001aak882 Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm. See Table 10 for list of components. Fig 2. Component layout Table 10. List of components See Figure 2 for component layout. BLL6H0514-25_4 Product data sheet Component Description Value C1, C6, C7, C12 multilayer ceramic chip capacitor 56 pF C2 multilayer ceramic chip capacitor 10 μF; 25 V C3, C4, C8, C9 multilayer ceramic chip capacitor 100 pF [1] C5, C10 multilayer ceramic chip capacitor 1 nF [2] C11 electrolytic capacitor 68 μF; 63 V R1 SMD resistor 10 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 Remarks [1] SMD 0603 © NXP B.V. 2010. All rights reserved. 5 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 8. Test information 8.1 Performance curves 001aak883 35 PL (W) 30 (1) (2) 001aak884 24 Gp (dB) (3) (1) 25 (2) 16 (3) 20 15 8 10 5 0 0 0 200 400 600 0 5 10 Pi (mW) VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Load power as a function of input power; typical values BLL6H0514-25_4 Product data sheet 20 25 30 PL (W) 35 VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1200 MHz Fig 3. 15 Fig 4. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 001aak885 70 001aak886 25 65 ηD (%) Gp (dB) ηD (%) 60 (1) 50 ηD 23 55 (2) (3) 21 40 45 Gp 30 19 35 17 25 20 10 15 1.15 0 0 5 10 15 20 25 30 PL (W) 35 1.25 15 1.45 1.35 f (GHz) VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 5. Drain efficiency as a function of load power; typical values Fig 6. Power gain and drain efficiency as function of frequency; typical values 001aak887 25 RLin (dB) 20 15 10 5 0 1.15 1.25 1.35 1.45 f (GHz) PL = 25 W; VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. Fig 7. BLL6H0514-25_4 Product data sheet Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 8. EUROPEAN PROJECTION Package outline SOT467C BLL6H0514-25_4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 10. Abbreviations Table 11. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL6H0514-25_4 20100330 Product data sheet - BLL6H0514-25_3 Modifications: • Figure 3 on page 6: the unit on the X-axis is corrected to mW. BLL6H0514-25_3 20100223 Product data sheet - BLL6H0514-25_2 BLL6H0514-25_2 20090317 Objective data sheet - BLL6H0514-25_1 BLL6H0514-25_1 20090305 Objective data sheet - - BLL6H0514-25_4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the BLL6H0514-25_4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLL6H0514-25_4 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 BLL6H0514-25 NXP Semiconductors LDMOS driver transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Typical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Performance curves . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 March 2010 Document identifier: BLL6H0514-25_4