PHILIPS BLA6H0912-500

BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 03 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1.
Test information
Typical RF performance at Tcase = 25 °C; tp = 128 μs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
VDS
PL
Gp
ηD
tr
tf
(MHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
960 to 1200
50
450
17
50
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an IDq of 100 mA, a tp of 128 μs with δ of 10 %:
‹ Output power = 450 W
‹ Power gain = 17 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (960 MHz to 1215 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLA6H0912-500
NXP Semiconductors
LDMOS avionics radar power transistor
1.3 Applications
„ L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
BLA6H0912-500 -
Description
Version
flanged ceramic package; 2 mounting holes; 2 leads
SOT634A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
Conditions
-
100
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
54
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
200
°C
Typ
Unit
5. Thermal characteristics
Table 5.
BLA6H0912-500_3
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Zth(j-c)
transient thermal impedance from
junction to case
Tcase = 85 °C; PL = 450 W
tp = 32 μs; δ = 2 %
0.03
K/W
tp = 128 μs; δ = 10 %
0.08
K/W
tp = 2400 μs; δ = 6.4 %
0.2
K/W
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6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
Min
Typ
Max Unit
100
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 270 mA
1.3
1.8
2.2
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
3.6
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
53.5
64
-
A
nA
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
360
gfs
forward transconductance
VDS = 10 V; ID = 405 mA
2.50
3.5
4.55 S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 14.18 A
-
70
85
mΩ
Table 7.
RF characteristics
Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; tp = 128 μs; δ = 10 %; RF performance at
VDS = 50 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test
circuit.
Symbol
Parameter
PL
output power
Conditions
Min Typ Max Unit
VDS
drain-source voltage
Gp
power gain
RLin
input return loss
PL = 450 W
7
11
-
dB
ηD
drain efficiency
PL = 450 W
45
50
-
%
Pdroop(pulse)
pulse droop power
PL = 450 W
-
0
0.3
dB
tr
rise time
PL = 450 W
-
20
50
ns
tf
fall time
PL = 450 W
-
6
50
ns
-
450
-
W
PL = 450 W
-
-
50
V
PL = 450 W
16
17
-
dB
6.1 Ruggedness in class-AB operation
The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz,
1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V; IDq = 100 mA; PL = 450 W; tp = 128 μs;
δ = 10 %.
BLA6H0912-500_3
Product data sheet
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LDMOS avionics radar power transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
MHz
Ω
Ω
960
1.36 − j1.45
1.49 − j1.48
1030
1.54 − j1.25
1.51 − j1.45
1090
1.67 − j1.22
1.36 − j1.47
1140
1.68 − j1.29
1.15 − j1.41
1215
1.43 − j1.42
0.79 − j1.17
drain
ZL
gate
ZS
001aaf059
Fig 1.
BLA6H0912-500_3
Product data sheet
Definition of transistor impedance
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7.2 Application circuit
C5
C2
R1
C1
C3
C12
C13
C4
C14
R2
C15
C6
C11
C8
C7
001aal599
Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 2.
Component layout
Table 9.
List of components
See Figure 2 for component layout.
BLA6H0912-500_3
Product data sheet
Component
Description
Value
C1, C3
multilayer ceramic chip capacitor
10 μF; 35 V
C2, C3, C14
multilayer ceramic chip capacitor
39 pF
[1]
C4, C13
multilayer ceramic chip capacitor
1 nF
[1]
C6, C7
multilayer ceramic chip capacitor
6.8 pF
[2]
C5, C8, C11, C12
multilayer ceramic chip capacitor
82 pF
[2]
C15
electrolytic capacitor
47 μF; 63 V
R1
SMD resistor
56 Ω
R2
metal film resistor
51 Ω
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
American Technical Ceramics type 800B or capacitor of same quality.
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Rev. 03 — 30 March 2010
Remarks
SMD 0603
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LDMOS avionics radar power transistor
8. Test information
8.1 Performance curves
001aal600
600
001aal601
20
Gp
(dB)
PL
(W)
(1)
(2)
(3)
(4)
(5)
16
(1)
(2)
(3)
(4)
(5)
400
12
8
200
4
0
0
0
6
12
18
0
Pi (W)
(1) f = 960 MHz
(2) f = 1030 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
(5) f = 1215 MHz
Load power as a function of input power;
typical values
Product data sheet
600
VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %.
(1) f = 960 MHz
BLA6H0912-500_3
400
PL (W)
VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %.
Fig 3.
200
Fig 4.
Power gain as a function of load power;
typical values
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001aal602
70
ηD
(%)
60
001aal603
20
70
ηD
(%)
Gp
(dB)
18
Gp
60
16
ηD
50
50
(1)
(2)
(3)
(4)
(5)
40
30
14
40
12
30
20
10
0
0
200
400
10
950
600
1050
20
1250
1150
PL (W)
f (MHz)
VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %.
VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 5.
Drain efficiency as a function of load power;
typical values
Fig 6.
Power gain and drain efficiency as function of
frequency; typical values
001aal604
16
RLin
(dB)
12
8
4
0
950
1050
1150
1250
f (MHz)
PL = 500 W; VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %.
Fig 7.
BLA6H0912-500_3
Product data sheet
Input return loss as a function of frequency; typical values
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8.2 Curves measured under Mode-S ELM pulse-conditions
001aal605
600
001aal606
20
Gp
(dB)
PL
(W)
(1)
16
(1)
400
(2)
(2)
12
8
200
4
0
0
0
4
8
12
16
20
0
200
400
Pi (W)
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
(1) Th = 25 °C
(1) Th = 25 °C
(2) Th = 65 °C
(2) Th = 65 °C
Fig 8.
600
PL (W)
Load Power as a function of input power;
typical values
Fig 9.
Power gain as a function of load power;
typical values
001aal607
60
ηD
(%)
(2)
(1)
40
20
0
0
200
400
600
PL (W)
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
(1) Th = 25 °C
(2) Th = 65 °C
Fig 10. Drain efficiency as function of load power; typical values
BLA6H0912-500_3
Product data sheet
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LDMOS avionics radar power transistor
8.3 Curves measured under Mode-S interrogator pulse-conditions
001aal608
600
001aal609
20
Gp
(dB)
PL
(W)
(1)
16
(1)
(2)
400
(2)
12
8
200
4
0
0
0
4
8
12
16
20
0
200
400
Pi (W)
600
PL (W)
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
(1) Th = 25 °C
(1) Th = 25 °C
(2) Th = 65 °C
(2) Th = 65 °C
Fig 11. Load Power as a function of input power;
typical values
Fig 12. Power gain as a function of load power;
typical values
001aal610
50
(1)
ηD
(%)
(2)
40
30
20
10
0
0
200
400
600
PL (W)
f = 1030 MHz; VDS = 50 V; IDq = 100 mA.
(1) Th = 25 °C
(2) Th = 65 °C
Fig 13. Drain efficiency as function of load power; typical values
BLA6H0912-500_3
Product data sheet
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Rev. 03 — 30 March 2010
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LDMOS avionics radar power transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT634A
D
A
F
3
D1
U1
B
q
C
c
1
L
p
U2
E1
E
w1 M A M B M
A
2
L
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
mm
4.83
3.68
12.82
12.57
0.15
0.08
22.58
22.12
22.56
22.15
inches
0.190
0.145
0.505
0.495
0.006
0.003
0.889
0.871
0.888
0.872
OUTLINE
VERSION
F
L
p
Q
q
U1
U2
w1
w2
13.34 13.34
13.08 13.08
1.14
0.89
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
13.84
13.59
0.25
0.51
0.525 0.525
0.515 0.515
0.045
0.035
0.210
0.170
0.133
0.123
0.067
0.057
1.100
1.345
1.335
0.545
0.535
0.010
0.020
E1
E
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
01-11-27
03-05-01
SOT634A
Fig 14. Package outline SOT634A
BLA6H0912-500_3
Product data sheet
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10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
DME
Distance Measuring Equipment
ELM
Extended Length Message
JTIDS
Joint Tactical Information Distribution System
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
Mode-S
Mode Select
RF
Radio Frequency
SMD
Surface Mounted Device
TACAN
TACtical Air Navigation
TCAS
Traffic Collision Avoidance System
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLA6H0912-500_3
20100330
Product data sheet
-
BLA6H0912-500_2
Modifications:
•
•
•
•
•
•
•
•
•
•
Table 7 on page 3: VCC changed into VDS.
Table 1 on page 1: changed value of PL.
Table 4 on page 2: changed minimum value of VGS.
Table 5 on page 2: changed several values.
Table 6 on page 3: changed several values.
Table 7 on page 3: changed several values.
Section 6.1 on page 3: changed several values.
Table 8 on page 4: changed several values.
Added Section 7.2 on page 5.
Added Section 8 on page 6.
BLA6H0912-500_2
20100302
Product data sheet
-
BLA6H0912-500_1
BLA6H0912-500_1
20090305
Objective data sheet
-
-
BLA6H0912-500_3
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
BLA6H0912-500_3
Product data sheet
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product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLA6H0912-500_3
Product data sheet
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
8
8.1
8.2
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Performance curves . . . . . . . . . . . . . . . . . . . . . 6
Curves measured under Mode-S ELM
pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 8
Curves measured under Mode-S interrogator
pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 March 2010
Document identifier: BLA6H0912-500_3