BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation pulsed class-AB f VDS PL Gp ηD tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) 1030 to 1090 28 200 20 65 10 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed RF performance at frequencies of 1030 MHz and 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA: Output power = 200 W Power gain = 20 dB Efficiency = 65 % Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range. BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLA6G1011-200R Package Name Description Version - SOT502A flanged LDMOST ceramic package; 2 mounting holes; 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 49 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Zth(j-c) Tcase = 25 °C; tp = 50 μs; δ = 2 % 0.085 K/W transient thermal impedance from junction to case BLA6G1011-200R_2 Preliminary data sheet Unit © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 2 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4 2.0 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 1620 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 40 48 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 9.45 A 11 18 26 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A 0.012 0.07 0.093 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - - 3 pF Table 7. RF characteristics Mode of operation: Pulsed RF; tp = 50 μs; δ = 2 %; VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL output power Gp power gain RLin Conditions Min Typ Max Unit 200 - - W PL = 200 W 18 20 - dB input return loss PL = 200 W 8 10 - dB ηD drain efficiency PL = 200 W 58 65 - % tr rise time PL = 200 W - 10 20 ns tf fall time PL = 200 W - 6 20 ns 6.1 Ruggedness in class-AB operation The BLA6G1011-200R is an enhanced rugged device and is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: tp = 50 μs; δ = 2 %; VDS = 28 V; IDq = 100 mA; PL = 200 W; f = 1030 MHz to 1090 MHz. BLA6G1011-200R_2 Preliminary data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 3 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values unless otherwise specified. f ZS ZL MHz Ω Ω 1030 0.57 − j0.94 0.80 − j0.68 1060 0.70 − j1.13 0.84 − j0.52 1090 0.80 − j1.53 0.86 − j0.35 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 RF performance 001aak266 250 PL (W) 001aak267 22 Gp (dB) 200 (1) (2) (3) 20 150 18 (1) (2) (3) 100 16 50 14 0 12 0 1 2 3 4 0 50 Pi (W) VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA. (1) f = 1030 MHz (2) f = 1060 MHz (2) f = 1060 MHz (3) f = 1090 MHz (3) f = 1090 MHz Output power as a function of input power; typical values Fig 3. 200 250 PL (W) Power gain as a function of load power; typical values BLA6G1011-200R_2 Preliminary data sheet 150 VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA. (1) f = 1030 MHz Fig 2. 100 © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 4 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor ηD (%) 001aak268 70 001aak269 25 Gp RLin (dB) 60 50 ηD (%) Gp 20 (1) (2) (3) 70 ηD 15 40 75 65 RLin 30 10 60 5 55 20 10 0 0 50 100 150 0 1020 200 250 PL (W) 1040 1060 50 1100 1080 f (MHz) VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA. PL = 200 W; VDS = 28 V; tp = 50 μs; δ = 2 %; IDq = 100 mA. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Power gain, input return loss and drain efficiency as function of frequency; typical values 7.3 Application circuit C1 C5 C2 + C6 C7 R1 C8 C3 C4 001aak270 See Table 9 for list of components. Fig 6. Component layout for class-AB application circuit BLA6G1011-200R_2 Preliminary data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 5 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor Table 9. List of components See Figure 6. Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB); εr = 6.15 F/m; thickness = 0.64 mm Component Description C1, C6 multilayer ceramic chip capacitor 10 μF Remarks TDK C2 multilayer ceramic chip capacitor 68 pF [1] C3 multilayer ceramic chip capacitor 1.5 pF [1] C4 multilayer ceramic chip capacitor 3.9 pF [1] C5, C8 multilayer ceramic chip capacitor 30 pF [2] C7 electrolytic capacitor 470 μF; 63 V R1 SMD resistor 12 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLA6G1011-200R_2 Preliminary data sheet Value 1206 © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 6 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 7. EUROPEAN PROJECTION Package outline SOT502A BLA6G1011-200R_2 Preliminary data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 7 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA6G1011-200R_2 20100301 Preliminary data sheet - BLA6G1011-200R_1 Modifications: BLA6G1011-200R_1 • The status of this document has been changed to “Preliminary data sheet”. 20090617 Objective data sheet BLA6G1011-200R_2 Preliminary data sheet - - © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 8 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the BLA6G1011-200R_2 Preliminary data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 9 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLA6G1011-200R_2 Preliminary data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 — 1 March 2010 10 of 11 BLA6G1011-200R NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 March 2010 Document identifier: BLA6G1011-200R_2