CHENMKO ENTERPRISE CO.,LTD CH847UPNPT SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 45 Volts CURRENT 100 mAmperes APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 CONSTRUCTION * PNP and NPN transistors in one package. 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT C1 B2 E2 6 5 4 2.15~2.45 TR2 TR1 1 2 3 E1 B1 C2 SC-88/SOT-363 Dimensions in millimeters LIMITING VALUES of TR1( NPN Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter − VCEO collector-emitter voltage open base VCES collector-base voltage open emitter VEBO emitter-base voltage open collector IC MAX. UNIT 50 V − 45 V − 50 V − 6.0 V collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tstg storage temperature −55 Tj junction temperature − Tamb operating ambient temperature −55 Tamb ≤ 25 °C; note 1 − 200 mW +150 °C 150 °C +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 RATING CHARACTERISTIC ( CH847UPNPT ) LIMITING VALUES of TR2(PNP Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -50 V VCEO collector-emitter voltage open base − -45 V VCES collector-base voltage open emitter − -50 V VEBO emitter-base voltage open collector − -5.0 V IC collector current (DC) − -100 mA ICM peak collector current − -200 mA IBM peak base current − -200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C T amb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient Note 1. Transistor mounted on an FR4 printed-circuit board. CONDITIONS VALUE note 1 625 UNIT W/ °C RATING CHARACTERISTIC ( CH847UPNPT ) CHARACTERISTICS of TR1 ( NPN Transistor ) Tamb = 25 °C unless otherwise specilped. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 30 V − − VCB = 30 V; TA = 125 OC − − 5.0 uA − − 0.1 uA IEBO emitter cut-off current IC = 0; VEB = 5 V 15 nA hFE DC current gain IC = 2.0 mA; VCE = 5.0V; note 1 200 − 450 VCEsat collector-emitter saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA − − 90 200 250 600 mV mV VBEsat base-emitter saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA − − 700 900 − − mV mV VBEon base-emitter voltage IC = 2.0 mA ; V cE = 5 V IC = 10.0 mA ; V CE = 5 V 580 − 660 − 700 720 mV mV CCBO collector-base capacitance I E = ie = 0; VCB = 10V ; f = 1 MHz − 3.5 6.0 pF fT transition frequency IC = 10 mA; VCE = 5V ; f = 100 MHz 100 300 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. CHARACTERISTICS of TR2( PNP Transistor ) Tamb = 25 °C unless otherwise specilped. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 30 V − − -15 nA VCB = 30 V; TA = 125 OC − − -4.0 uA uA IEBO emitter cut-off current IC = 0; VEB = - 5 V − − -0.1 hFE DC current gain IC = -2.0 mA; VCEI = -5.0V 200 290 450 VCEsat collector-emitter saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA − − -75 -250 -300 -650 mV mV VBEsat base-emitter saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 100 mA ; I B = 5.0 mA − − -700 -850 − -950 mV mV VBEon base-emitter voltage IC = 2.0 mA ; V cE = 5 V IC = 10.0 mA ; V CE = 5 V -600 − -650 − -750 -820 mV mV CCBO collector-base capacitance IE = ie = 0; VCB = -10V; f = 1 MHz − 3.0 4.5 pF fT transition frequency IC = -10mA; VCE = -5V ; f = 100 MHz 100 200 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.