CHENMKO ENTERPRISE CO.,LTD CHT42PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * Low voltage (Max.=300V) . * High saturation current capability. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * Low current (Max.=500mA). * Suitable for high packing density. .066 (1.70) .110 (2.80) .082 (2.10) .119 (3.04) (1) .018 (0.30) FEATURE (3) (2) CONSTRUCTION .103 (2.64) .086 (2.20) MARKING .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) C (3) CIRCUIT .007 (0.177) * T42 .002 (0.05) .055 (1.40) .047 (1.20) * NPN High Voltage Transistor (1) B E (2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 300 VCEO collector-emitter voltage open base − 300 V VEBO emitter-base voltage open collector − 6 V IC collector current DC − 500 mA ICM peak collector current − 500 mA IBM peak base current − 100 mA Ptot total power dissipation − 350 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-4 RATING CHARACTERISTIC CURVES ( CHT42PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 2 0 0 V − 0.1 uA IEBO emitter cut-off current IC = 0; VEB = 6 V − 0.1 uA hFE DC current gain VCE = 10V; note 1; IC = 1.0 mA 25 − IC = 10 mA 40 − IC = 30 mA 40 300 VCEsat collector-emitter saturation voltage IC = 20 mA; IB = 2 mA − 500 mV VBEsat base-emitter saturation voltage IC = 20 mA; IB = 2 mA − 900 mV Ccb collector-base capacitance IE = ie = 0; VCB = 2 0 V ; f = 1 MHz − 3 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 50 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. h FE - DC CURRE NT GAIN 140 120 125 °C 100 80 25 °C 60 - 40 °C 40 VCE = 5V 20 V BESAT - BASE -EMITTER VOLTAG E (V) 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 °C 0.6 25 °C 125 °C 0.4 = 10 0.2 0.1 IC 1 10 - COLLE CTOR CURRENT ( mA) 100 Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 25 °C 0.1 - 40 °C 0.05 0.1 100 Base-Emitter ON Voltage vs Collector Current 1 VC E = 1V 0.8 - 40 °C 0.6 25 °C 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 100 100 V CB = 150V CAPACITANCE (pF) 50 10 Ceb 20 10 5 C cb 2 1 25 1 10 I C - COLLECTOR CURRENT (mA) Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 125 °C 0.15 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) DC Current Gain vs Collector Current VCESAT - COLLE CTOR-EMITTER VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CHT42PT ) 1 50 75 100 125 T A - AMBIENT TEMPE RATURE ( °C) 150 1 10 100 REVERSE BIAS VOLTAGE (V) 1000 RATING CHARACTERISTIC CURVES ( CHT42PT ) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150