CHENMKO CHTA29XPT

CHENMKO ENTERPRISE CO.,LTD
CHTA29XPT
SURFACE MOUNT
NPN Darlington Transistor
VOLTAGE 40 Volts
CURRENT 0.5 Ampere
APPLICATION
* Preamplifier input applications.
SC-62/SOT-89
FEATURE
* High current , Ic=500mA
* High DC current gain , hFE>20000
1.6MAX.
4.6MAX.
0.4+0.05
* T29
0.8MIN.
MARKING
+0.08
0.45-0.05
+0.08
0.40-0.05
+0.08
0.40-0.05
1.50+0.1
1.50+0.1
1
1 Base
CIRCUIT
4.6MAX.
2.5+0.1
1.7MAX.
2
3
2 Collector ( Heat Sink )
C (2)
3 Emitter
(1) B
E (3)
SC-62/SOT-89
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
VCEO
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
10
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1000
mA
IBM
Ptot
peak base current
total power dissipation
−
200
mA
−
1300
Tstg
storage temperature
junction temperature
−65
−
+150
Tj
mW
°C
°C
Tamb
operating ambient temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
−65
150
+150
V
°C
2007-06
RATING CHARACTERISTIC CURVES ( CHTA29XPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
104
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 30 V
−
100
nA
IEBO
emitter cut-off current
VEB = 10 V
−
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 5V
IC = 10 mA; VCE =5V
IC = 100 mA; VCE = 5V
IC = 500 mA; VCE = 5V
VCE(sat)
collector-emitter saturation voltage
IC = 100 mA; IB = 0.1 m A
−
1.0
V
VBE(sat)
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 m A
−
1.5
V
VBE(ON)
base-emitter saturation voltage
IC = 10 mA; VCE =5V
−
1.4
V
fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 100MHz
−
MHz
4000
10000
20000
4000
220(typ)
−
−
−