CHENMKO ENTERPRISE CO.,LTD CH4033ZPT SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 6.50+0.20 0.90+0.05 3.5+0.2 CONSTRUCTION 7.0+0.3 3.00+0.10 0.70+0.10 MARKING 0.9+0.2 2.0+0.3 * PNP SILICON Transistor 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 * ZEP 1 1 Base CIRCUIT 3 2 2 Emitter 3 3 Collector ( Heat Sink ) 1 2 SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − collector-emitter voltage open base − 80 80 V VCEO VEBO emitter-base voltage open collector − 5.0 V IC collector current (DC) − 1000 mA ICM peak collector current − 1500 − 2.0 W Tamb ≤ 25 °C; note 1 V mA Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CH4033ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 60 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA DC current gain IC = -0.1 mA; VCE = 5V IC = 100 mA; VCE = 5V 75 hFE − VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = 500 mA; VCE =5V 100 70 IC = 1.0A; VCE = 5V 25 300 − − IC = 150 mA; IB = 15 m A − 0.15 V IC =-500 mA; IB = 50 m A 0.5 IC =150 mA; IB =15 mA − − 0.9 V V IC =-500 mA; IB = 50 m A − 1.1 V − 20 pF 110 pF Cob collector capacitance C ib emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − fT transition frequency IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz 100 IE = ie = 0; VCB = 1 0 V; f = 1 MHz − MHz