CHENMKO CH4033ZPT

CHENMKO ENTERPRISE CO.,LTD
CH4033ZPT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 80 Volts
CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
1.65+0.15
* Suitable for high packing density.
* High saturation current capability.
* Voltage controlled small signal switch.
6.50+0.20
0.90+0.05
3.5+0.2
CONSTRUCTION
7.0+0.3
3.00+0.10
0.70+0.10
MARKING
0.9+0.2
2.0+0.3
* PNP SILICON Transistor
0.70+0.10
2.30+0.1
2.0+0.3
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
* ZEP
1
1 Base
CIRCUIT
3
2
2 Emitter
3
3 Collector ( Heat Sink )
1
2
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
collector-emitter voltage
open base
−
80
80
V
VCEO
VEBO
emitter-base voltage
open collector
−
5.0
V
IC
collector current (DC)
−
1000
mA
ICM
peak collector current
−
1500
−
2.0
W
Tamb ≤ 25 °C; note 1
V
mA
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CH4033ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
357
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
10
nA
DC current gain
IC = -0.1 mA; VCE = 5V
IC = 100 mA; VCE = 5V
75
hFE
−
VCEsat
VBEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
IC = 500 mA; VCE =5V
100
70
IC = 1.0A; VCE = 5V
25
300
−
−
IC = 150 mA; IB = 15 m A
−
0.15
V
IC =-500 mA; IB = 50 m A
0.5
IC =150 mA; IB =15 mA
−
−
0.9
V
V
IC =-500 mA; IB = 50 m A
−
1.1
V
−
20
pF
110
pF
Cob
collector capacitance
C ib
emitter capacitance
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
−
fT
transition frequency
IC = 50 mA; VCE = 1 0 V;
f = 1.0 MHz
100
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
−
MHz