VISHAY DG309BAK/883

DG308B/309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
22-V Supply Voltage Rating
CMOS Compatible Logic
Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: < 200 ns
Low Glitching—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Superior to DG308A/309
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
switching transients. The DG308B and DG309B can handle
up to 22-V input signals. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
The DG308B is a normally open switch and the DG309B is a
normally closed switch. (See Truth Table.)
DG308B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
V–
GND
S4
D4
IN4
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
Logic
DG308B
0
OFF
ON
1
ON
OFF
IN2
D2
Logic “0” 3.5V
Logic “1” 11 V
S2
V+
NC
Temp Range
S3
D3
DG309B
Package
16-Pin Plastic DIP
40 to 85C
–40
16-Pin Narrow SOIC
IN3
16-Pin TSSOP
Part Number
DG308BDJ
DG309BDJ
DG308BDY
DG309BDY
DG308BDQ
DG309BDQ
DG308BAK
Top View
–55
55 to 125C
16 Pi CerDIP
16-Pin
C DIP
DG308BAK/883
DG309BAK
DG309BAK/883
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
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4-1
DG308B/309B
Vishay Siliconix
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, Suffix) . . . . . . . . . . . . . . . . . –65 to 150C
(DJ, DY, DQ Suffix) . . . . . . . . . . –65 to 125C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 75C
d. Derate 7.6 mW/C above 75C
e. Derate 12 mW/C above 75C
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 11 V, 3.5 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125C
–40 to 85C
Mind Maxd Mind Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
rDS(on) Match
VANALOG
rDS(on)
Full
VD = 10 V, IS = 1 mA
DrDS(on)
Room
Full
45
Room
2
Source Off Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room
Full
0.01
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room
Full
0.01
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room
Full
0.02
V
W
%
–5
0.5
5
–0.5
–10
0.5
10
–5
0.5
5
nA
A
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
VINH or VINL
CIN
–
Full
Room
–
5
V
mA
pF
Dynamic Characteristics
Turn-On Time
Turn-Off Time
tON
tOFF
Charge Injection
Source-Off Capacitance
Q
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
Off Isolation
OIRR
Channel-to-Channel
Crosstalk
XTALK
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4-2
VS = 3 V, See Figure 2
CL = 1000 pF, Vg= 0 V,
Rg = 0 W
VS = 0 V, f = 1 MHz
VD = VS = 0 V, f = 1 MHz
CL = 15 pF, RL = 50 W
VS = 1 VRMS, f = 100 kHz
Room
Room
Room
1
Room
5
Room
5
Room
16
Room
90
Room
95
ns
pC
pF
F
dB
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
DG308B/309B
Vishay Siliconix
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 11 V, 3.5 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125C
–40 to 85C
Mind Maxd Mind Maxd
Unit
Power Supply
1
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Power Supply Range for
Continuous Operation
VOP
Full
VIN = 0 or 15 V
1
mA
V
Test Conditions
Unless Specified
Parameter
V+ = 12 V, V– = 0 V
VIN = 11 V, 3.5 Vf
Tempb
VANALOG
Full
rDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
Symbol
Typc
A Suffix
D Suffix
–55 to 125C
–40 to 85C
Mind Maxd Mind Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
V
W
Room
Room
90
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
tON
tOFF
Q
VS = 8 V, See Figure 2
CL = 1 nF, Vgen= 6 V, Rgen = 0 W
Room
4
ns
pC
Power Supply
1
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Power Supply Range for
Continuous Operation
VOP
Full
VIN = 0 or 12 V
1
mA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
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4-3
DG308B/309B
Vishay Siliconix
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
100
r DS(on)– Drain-Source On-Resistance ( )
r DS(on)– Drain-Source On-Resistance ( )
110
100
90
5 V
80
70
10 V
60
15 V
50
40
20 V
30
20
–8
–4
0
4
8
12
16
80
70
60
125C
50
85C
40
25C
30
–55C
20
10
0
–15
10
–20 –16 –12
V+ = 15 V
V– = –15 V
90
20
–10
–5
VD – Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
I S,I D – Current (pA)
r DS(on)– Drain-Source On-Resistance ( )
20
175
7V
125
10 V
12 V
15 V
75
ID(on)
10
IS(off), ID(off)
0
–10
–20
50
–30
25
–40
–20
0
0
2
4
6
8
10
12
14
16
–15
–10
VD – Drain Voltage (V)
–5
0
5
10
15
20
Analog Voltage
Leakage Currents vs. Temperature
QS, QD – Charge Injection vs. Analog Voltage
1 nA
30
V+ = 15 V
V– = –15 V
VS, VD = 14 V
20
100 pA
Q – Charge (pC)
I S,I D – Current
15
V+ = 22 V
V– = –22 V
TA = 25C
30
200
100
10
Leakage Currents vs. Analog Voltage
V+ = 5 V
150
5
40
250
225
0
VD – Drain Voltage (V)
IS(off), ID(off)
10 pA
10
0
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–10
–20
1 pA
–55
–35
–15
5
25
45
65
Temperature (C)
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4-4
85
105 125
–30
–15
–10
–5
0
5
10
15
Analog Voltage (V)
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Off Isolation vs. Frequency
120
V+ = 15 V
V– = –15 V
110
100
OIRR (dB)
90
RL = 50 80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
V–
Level
Shift/
Drive
V+
INX
DX
GND
V–
FIGURE 1.
TEST CIRCUITS
+15 V
V+
VS = +3 V
D
S
VO
Logic
Input
tr <20 ns
tf <20 ns
12 V
50%
0V
tOFF
IN
12 V
GND
V–
CL
35 pF
RL
1 k
90%
Switch
Output
–15 V
VO = VS
VO
tON
RL
RL + rDS(on)
FIGURE 2. Switching Time
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
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4-5
DG308B/309B
Vishay Siliconix
C
+15 V
+15 V
C
V+
S1
VS
V+
S
VS
VO
D
D1
Rg = 50 W
50 W
IN1
Rg = 50 W
0V, 15 V
50 W
IN
0V, 15 V
S2
NC
GND
V–
C
50 W
IN2
0V, 15 V
GND
–15 V
C = RF bypass
XTALK Isolation = 20 log
VS
Off Isolation = 20 log
VO
FIGURE 3. Off Isolation
C
–15 V
FIGURE 4. Channel-to-Channel Crosstalk
DVO
VO
V+
S
D
VO
IN
Vg
V–
VS
VO
+15 V
Rg
VO
D2
CL
1000 pF
12 V
INX
ON
OFF
ON
V–
GND
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
–15 V
FIGURE 5. Charge Injection
30 pF
+5 V
VIN1
VL
+15 V
+15 V
V+
+
LM101A
VIN2
+15 V
–
DG419
–15 V
RF1
18 kW
RF1
9.9 kW
RF1
100 kW
RG1
2 kW
RG2
100 W
RG3
100 W
DG308B
CH
V–
GND
–15 V
Gain =
Gain 1 (x1)
RF + RG
Gain 2 (x10)
RG
Gain 3 (x100)
Gain 4 (x1000)
V–
GND
Logic High = Switch On
–15 V
FIGURE 6. A Precision Amplifier with Digitally Programmable Inputs and Gains
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4-6
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
DG308B/309B
Vishay Siliconix
15 V
V+
Logic Input
Low = Sample
High = Hold
1 kW
+15 V
+15 V
–15 V
–
J202
LM101A
VIN
+
5 MW
200 W
50 pF
5.1 MW
30 pF
VOUT
1000 pF
DG309B
V–
2N4400
J500
–15 V
J507
–15 V
= 25 ms
= 1 ms
= 5 mV
= 5 mV/s
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
FIGURE 7. Sample-and-Hold
+15 V
160
V1
C4
fC3
Select
TTL
Control
fC2
Select
fC1
Select
150 pF
120
C3
1500 pF
Voltage Gain – dB
fC4
Select
C2
0.015 mF
C1
0.15 mF
80
fC1
fC2
fC3
fL1
0
V–
DG309B
fC4
40
fL2
fL3
fL4
GND
–40
1
–15 V
10
100
1k
R3 = 1 MW
+15 V
–15 V
–
R1 = 10 kW
LM101A
+
R2 = 10 kW
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2pR3CX
fL (Unity Gain Frequency) =
30 pF
10 k
100 k
1M
Frequency – Hz
Max Attenuation =
rDS(on)
10 kW
R3
R1
= 100 (40 dB)
1
2pR1CX
–40 dB
FIGURE 8. Active Low Pass Filter with Digitally Selected Break Frequency
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
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4-7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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