RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.17GHz, 28Vdc Average Output Power: 28dBm @ -39dBc ACPR Gain: 14.5dB (typ.) Efficiency: 23% (typ.) 10:1 VSWR Ruggedness at 2W (CW), 28V, 2.11GHz PFP-16 Performance at 960MHz, 26Vdc, P1dB Average Output Power: 2W min. Gain: 20dB (typ.) Efficiency: 50% (typ.) 10:1 VSWR Ruggedness at 2W, 26V, 960MHz Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS +15, -0.5 Vdc Total Power Dissipation @ TC = 25 °C PD 6.9 W Storage Temperature TSTG -65 to +150 °C Junction Temperature TJ 150 °C Symbol Max Unit RΘJC 18 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate Threshold Voltage (Vds = 26 Vdc, Id = 25 mA) VGS(th) 2 — 5 Vdc Gate Quiescent Voltage (Vds = 26 Vdc, Id = 25 mA) VGS(Q) 3 — 5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 0.1 A) VDS(on) — 0.30 — Vdc DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) 2 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary Characteristic Symbol Min Typ Max Unit Common Source Amplifier Gain (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) GP — 14 — dB Drain Efficiency (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) EFF (ŋ) — 38 — % Input Return Loss (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) IRL — -9 — dB Output VSWR Tolerance (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) No Degradation In Output Power Before and After Test RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture shown in Figure 10) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) GP — 14.5 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) EFF (ŋ) — 40 — % Input Return Loss (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) IRL — -10 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) GP — 15 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) EFF (ŋ) — 45 — % Input Return Loss (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) IRL — -11 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture shown in Figure 12) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) GP — 20 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) IRL — -12 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 3 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary 16 25 15 -41 28VDC, IDQ=35mA 3GPP WCDMA, Test Model 1 w /16DPCH -43 20 15 13 10 -47 -49 -51 28V DC, IDQ=35mA, 2.17GHz 3GPP W-CDMA, Test Model 1 w /16DPCH 12 ACPR(dBc) 14 Efficiency (%) Gain(dB) -45 5 11 -55 0 18 20 21 22 23 24 25 26 27 28 18 19 20 21 22 23 24 25 26 27 28 POUT (dBm Avg.) POUT (dBm Avg.) Graph 1. W-CDMA: Gain and Efficiency versus Output Power Graph 2. W-CDMA: ACPR versus Output Power 50 16 15 -30 11 20 10 9 10 8 6 IM 3 (2.14GHz) IM 3 (2.11GHz) IM 5 (2.17GHz) IM 5 (2.14GHz) IM 5 (2.11GHz) 28V DC, IDQ=35mA 18 20 22 24 26 28 30 32 33 34 35 POUT dBm Graph 3. CW: Gain and Efficiency versus Output Power 28V DC, IDQ=35mA 2-Tone, 100kHz Spacing -35 IMD(dBc) 30 12 Efficiency (%) 13 7 IM 3 (2.17GHz) -25 40 14 Gain(dB) ACPR (2.17GHz) ACPR (2.14GHz) ACPR (2.11GHz) -53 -40 -45 -50 -55 -60 0 -65 18 20 22 24 26 28 30 32 POUT (dBm Avg.) Graph 4. Two Tone: Intermodulation Distortion versus Output Power 4 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary 16 50 1905MHz, 26VDC, IDQ=35mA 45 40 15 30 14 25 20 13 Eff. (%) Gain(dB) 35 15 12 10 Gain Efficiency 11 5 0 15.0 20.0 22.0 24.0 26.0 28.0 30.0 31.0 32.0 32.5 33.0 33.5 POUT(dBm- Avg.) Graph 5. PHS Power Gain and Drain Efficiency vs. Output Power POUT(dBm- Avg.) 20 21 22 23 24 25 26 27 28 29 30 -50 ACPR(-dBc) 1905MHz, 26VDC, IDQ=35mA -55 ACPR (600kHz offset) -60 ACPR (900kHz offset) -65 -70 -75 -80 -85 Graph 6. PHS ACPR vs. Output Power 5 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary 50 25 CW 26V DC, IDQ=50mA 45 23 40 22 35 21 30 20 25 19 20 18 Gain (960MHz) 15 17 Gain (925MHz) 10 Eff (960MHz) 16 Eff. (%) Gain(dB) 24 5 Eff (925MHz) 0 15 25 26 27 28 29 30 31 32 33 34 POUT (dBm) Graph 7. Power Gain and Drain Efficiency vs. Output Power POUT(dBm - Avg.) 22 23 24 25 26 27 28 29 30 31 -20 -25 -30 960MHz, 26V DC, IDQ=50mA -35 IMD(dBc) -40 -45 -50 -55 -60 3rd Order IMD -65 5th Order IMD -70 7th Order IMD -75 Graph 8. Intermodulation Distortion vs. Output Power 6 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary C1,C8 Tantalum Surface Mt. Cap., 100 µF, 35 V C2,C9 Ceramic Chip Capacitor, 0.1 µF C3,C10 Ceramic Chip Capacitor, 1000 pF C4,C6,C11,C13 Chip Capacitor, 33 pF ATC100A C5,C7,C12 Chip Capacitor, 2.7 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1,L2 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST0822-002PP R1 Chip Resistor (0805), 100 Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Distributed Microstrip Element, 0.040” x 0.046” Distributed Microstrip Element, 0.490” x 0.046” Distributed Microstrip Element, 0.180” x 0.026” Distributed Microstrip Element, 0.135” x 0.100” Distributed Microstrip Element, 0.175” x 0.046” Distributed Microstrip Element, 1.035” x 0.046” Distributed Microstrip Element, 0.125” x 0.046” PC Board Rogers (RO4350) Duroid, 0.020:” thick, Er=3.5, 1 Oz Copper Both Sides Figure 9. 1880—1920 MHz Test Fixture Schematic M/A-COM 0822-002 Figure 10. 1880—1920 MHz Test Fixture Component Layout 7 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary C1,C9 Tantalum Surface Mt. Cap., 100 µF, 35 V C2,C10 Ceramic Chip Capacitor, 0.1 µF C3,C11 Ceramic Chip Capacitor, 1000 pF C4,C6,C12,C14 Chip Capacitor, 33 pF ATC100A C5,C7,C15 Chip Capacitor, 2.7 pF ATC100A C8,C13 Chip Capacitor, 1.2 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1,L2,L3 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST0822-002PP R1 Chip Resistor (0805), 100 Ohm Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Distributed Microstrip Element, 0.050” x 0.046” Distributed Microstrip Element, 0.050” x 0.046” Distributed Microstrip Element, 0.235” x 0.046” Distributed Microstrip Element, 0.273” x 0.046” Distributed Microstrip Element, 0.105” x 0.026” Distributed Microstrip Element, 0.229” x 0.026” Distributed Microstrip Element, 1.036” x 0.046” Distributed Microstrip Element, 0.180” x 0.046” Distributed Microstrip Element, 0.050” x 0.046” Distributed Microstrip Element, 0.050” x 0.046” PC Board Rogers (RO4350) Duroid, 0.020:” thick, Er=3.5, 1 Oz Copper Both Sides Figure 11. 920—960 MHz Test Fixture Schematic Figure 12. 920—960 MHz Test Fixture Component Layout 8 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary Figure 13. PFP-16 Pin Connections 9 RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V MAPLST0822-002PP 4/14/05 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 10 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020