FDMC8026S N-Channel PowerTrench® SyncFETTM 30 V, 21 A, 4.4 mΩ Features General Description The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode. Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU low side switch RoHS Compliant Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S S S G D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 21 76 (Note 1a) -Pulsed 19 A 100 Single Pulse Avalance Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 66 36 (Note 1a) Operating and Storage Junction Temperature Range 2.4 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8026S Device FDMC8026S ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM June 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 26 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.2 1.6 -5 mV/°C VGS = 10 V, ID = 19 A 3.8 4.4 VGS = 4.5 V, ID = 17.5 A 4.5 5.2 VGS = 10 V, ID = 19 A, TJ = 125 °C 4.5 5.8 VDS = 5 V, ID = 19 A 106 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 0.1 2380 3165 pF 885 1175 pF 100 150 pF 0.7 2.5 Ω Switching Characteristics td(on) Turn-On Delay Time 11 20 ns tr Rise Time 5 10 ns td(off) Turn-Off Delay Time 30 48 ns tf Fall Time 4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 37 52 nC Qg Total Gate Charge 18 25 nC Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 19 A Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 19 A, VGS = 10 V, RGEN = 6 Ω 6 nC 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 19 A (Note 2) 0.8 1.2 IF = 19 A, di/dt = 300 A/μs V 29 47 ns 33 53 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L = 3 mH, IAS = 10.2 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 2 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 100 5 VGS = 6 V ID, DRAIN CURRENT (A) 80 VGS = 4.5 V VGS = 4 V 60 VGS = 3.5 V VGS = 3 V 40 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 4 VGS = 3 V 3 1 VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 10 V 0 2.0 0 40 60 80 100 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 12 ID = 19 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 19 A 9 6 TJ = 125 oC 3 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) VGS = 3.5 V 2 VDS = 5 V TJ = 125 oC 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS = 0 V TJ = 125 oC 10 TJ = 25 oC TJ = -55 oC 1 0.1 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 3 1.2 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 19 A 8 Ciss VDD = 15 V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V VDD = 20 V 4 1000 Coss Crss 2 100 50 0.1 0 0 8 16 24 32 f = 1 MHz VGS = 0 V 40 1 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 60 VGS = 4.5 V 40 20 o RθJC = 3.4 C/W Limited by Package 1 0.001 0.01 0.1 1 10 0 25 100 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 1000 100 μs 10 1 ms 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100200 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 100 4 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 5 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMC8026S. 25 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 CURRENT (A) 20 15 10 di/dt = 300 A/μs 5 0 -5 0 50 100 150 200 250 TIME (ns) 0.001 TJ = 100 oC 0.0001 0.00001 TJ = 25 oC 0.000001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMC8026S SyncFET body diode reverse recovery characteristic ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 TJ = 125 oC Figure 15. SyncFET body diode reverse leakage versus drain-source voltage 6 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMC8026S N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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I64 ©2013 Fairchild Semiconductor Corporation FDMC8026S Rev.C4 8 www.fairchildsemi.com FDMC8026S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* AX-CAP®* PowerTrench® FRFET® Global Power ResourceSM PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ Green FPS™ e-Series™ CorePOWER™ QS™ TinyLogic® Gmax™ CROSSVOLT™ Quiet Series™ TINYOPTO™ GTO™ CTL™ RapidConfigure™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ISOPLANAR™ DEUXPEED® TinyWire™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ Dual Cool™ TranSiC® and Better™ EcoSPARK® SignalWise™ TriFault Detect™ MegaBuck™ EfficentMax™ SmartMax™ TRUECURRENT®* MICROCOUPLER™ ESBC™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® MillerDrive™ SuperFET® Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ mWSaver™ SuperSOT™-6 FACT® VCX™ OptoHiT™ SuperSOT™-8 FAST® VisualMax™ OPTOLOGIC® SupreMOS® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™