N-Channel PowerTrench® SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A High performance technology for extremely low rDS(on) SyncFETTM Schottky Body Diode RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C TJ, TSTG 12 V (Note 1a) 33 A 140 Single Pulse Avalanche Energy PD Units V 90 -Pulsed EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 145 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TC = 25 °C RθJA Thermal Resistance, Junction to Ambient TA = 25 °C 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking 09OD Device FDMS8558S ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 Package Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM April 2012 FDMS8558S Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V ±100 nA 2.2 V 24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.1 1.4 -3 mV/°C VGS = 10 V, ID = 33 A 1.1 1.5 VGS = 4.5 V, ID = 31 A 1.3 1.7 VGS = 10 V, ID = 33 A, TJ = 125 °C 1.6 2.1 VDS = 5 V, ID = 33 A 317 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 5118 pF 1508 pF 195 pF 0.9 Ω 14 ns 8 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 33 A, VGS = 10 V, RGEN = 6 Ω 51 ns 7 ns VGS = 0 V to 10 V 81 nC VGS = 0 V to 4.5 V VDD = 13 V, ID = 33 A 38 nC 10 nC 9.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 33 A (Note 2) 0.8 1.2 IF = 33 A, di/dt = 300 A/μs V 35 ns 49 nC NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A. ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 2 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 140 6 VGS = 4.5 V 120 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 3.5 V VGS = 3 V 100 VGS = 2.5 V 80 60 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 0 0 0.2 0.4 0.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 VGS = 2.5 V 4 3 2 1 VGS = 10 V 0 0.8 0 20 40 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 100 125 150 ID = 38 A 3 TJ = 125 oC 2 1 TJ = 25 oC 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 TJ = 25 oC TJ = 125 oC 40 TJ = -55 oC 20 0 1.2 1.5 1.8 2.1 2.4 4 5 6 7 8 9 200 100 VGS = 0 V TJ = 25 oC 1 0.1 0.01 0.0 2.7 TJ = 125 oC 10 TJ = -55 oC 0.2 0.4 0.6 0.8 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V 60 3 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 100 140 4 0 Figure 3. Normalized On Resistance vs Junction Temperature 120 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 TJ, JUNCTION TEMPERATURE (oC) 140 100 6 ID = 38 A VGS = 10 V -50 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.7 -75 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.5 VGS = 3 V VGS = 3.5 V VGS = 4.5 V 3 1.0 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 38 A 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 13 V 4 VDD = 15 V Coss 1000 2 0 f = 1 MHz VGS = 0 V 0 15 30 45 60 75 90 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 200 100 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = TJ 1 0.001 0.01 100 oC 150 VGS = 4.5 V 100 Limited by Package 50 o RθJC = 1.6 C/W = 125 oC 0.1 1 10 100 0 25 1000 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 10000 100 100 us 10 0.1 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss 100 0.1 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 125 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) TA = 25 oC 100 10 1 0.1 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 SINGLE PULSE Rθ JA = 125 oC/W 1000 4 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 1E-3 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 1E-4 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 5 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFETTM Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 40 35 CURRENT (A) 30 25 di/dt = 300 A/μs 20 15 10 5 0 -5 700 800 900 1000 1100 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFETTM body diode reverse leakage versus drain-source voltage Figure 14. FDMS8558S SyncFETTM body diode reverse recovery characteristic ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 10 6 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) 5.10 4.90 A PKG CL 8 5.10 3.91 B 5 8 7 6 1.27 5 0.77 4.52 PIN #1 IDENT MAY APPEAR AS OPTIONAL 1 KEEP OUT AREA 3.75 6.25 5.90 PKG CL 6.61 1.27 TOP VIEW 4 1 2 3 4 0.61 1.27 SEE DETAIL A 3.81 LAND PATTERN RECOMMENDATION SIDE VIEW 5.10 4.90 3.81 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE 1.27 1 2 3 6 0.46 (8X) 0.36 0.10 C A B (0.39) 4 (0.52) 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 6.25 5.90 (0.50) (1.81) (3.40) 4.29 4.09 (1.19) 8 7 6 0.15 MAX (2X) 5 3.86 3.61 OPTION - B (PUNCHED TYPE) 0.71 0.44 BOTTOM VIEW 0.10 C 0.08 C 0.30 0.20 1.10 0.90 0.05 0.00 DETAIL A 5.85 5.65 C SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. AA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08AREV6. SCALE: 2:1 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 7 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 8 www.fairchildsemi.com FDMS8558S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ Green Bridge™ BitSiC® QFET® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™