FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ Features General Description Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A HBM ESD protection level of 6 kV typical(note 3) Applications High performance trench technology for extremely low rDS(on) and fast switching Synchronous Buck for Vcore and Server High power and current handling capability Notebook Battery Pack Termination is Lead-free and RoHS Compliant Load Switch D D D G D S D S D S D D G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current -Continuous 18.6 -Pulsed 63 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 4) 600 Power Dissipation TA = 25 °C (Note 1a) 2.5 Power Dissipation TA = 25 °C (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS8840NZ Device FDS8840NZ ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 Package SO8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET April 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 µA 3.0 V 40 V 31 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 18.6 A 3.9 4.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 14.9 A 4.6 6.0 VGS = 10 V, ID = 18.6 A, TJ =125 °C 5.9 7.0 VDS = 5 V, ID = 18.6 A 83 gFS Forward Transconductance 1.0 1.8 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 5665 7535 pF 650 865 pF 445 670 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 20 V, ID = 18.6 A, VGS = 10 V, RGEN = 6 Ω td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 18.6 A 18 32 ns 13 23 ns 57 103 ns 11 20 ns 103 144 nC 54 76 nC 16 nC 19 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 18.6 A 0.8 1.2 VGS = 0 V, IS = 2.1 A 0.7 1.2 IF = 18.6 A, di/dt = 100 A/µs V 33 53 ns 21 34 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25 °C, L = 3 mH, IAS = 20 A, VDD = 40 V, VGS = 10 V. ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 2 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 60 VGS = 4 V 50 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V VGS = 10 V VGS = 3.5 V 40 30 VGS = 3 V 20 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 10 0 0 0.2 0.4 0.6 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 2 1 VGS = 10 V 0 0.8 0 20 30 40 50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 12 ID = 18.6 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 9 ID = 18.6 A TJ = 125 oC 6 3 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 60 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 4 V VGS = 3.5 V VDS = 5 V 40 TJ = 150 oC 30 20 TJ = 25 oC 10 TJ = -55 oC 0 0 1 2 3 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 18.6 A 8 Ciss VDD = 15 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 20 V 4 VDD = 25 V 1000 Coss 100 0.1 0 0 30 60 90 120 1 Figure 7. Gate Charge Characteristics 40 Figure 8. Capacitance vs Drain to Source Voltage -3 30 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC TJ = 100 10 oC TJ = 125 oC 1 0.001 VGS = 0 V -4 10 -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 -8 10 -9 0.01 0.1 1 10 100 10 1000 0 5 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 1 ms 10 10 ms 0.1 100 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s o DC TA = 25 C 0.01 0.01 0.1 1 10 100 20 25 30 2000 1000 VGS = 10 V SINGLE PULSE RθJA = 125 oC/W 100 TA = 25 oC 10 1 0.3 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 15 Figure 10. Igss vs Vgs 100 1 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 2 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 0.0003 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 5 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 www.fairchildsemi.com FDS8840NZ N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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