NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2369 █ APPLICATIONS This device is designed for high speed saturated switching at collector currents of mA to 100mA █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Collector，C 2―Base，B 3―Emitter，E VCBO ——Collector-Base Voltage………………………………40V VCEO ——Collector-Emitter Voltage……………………………15V VE B O ——Emitter-Base Voltage………………………………4.5V I C ——Collector Current …………………………………… 200mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ４０ Ｖ BVCEO Collector-Emitter Breakdown Voltage １５ Ｖ BVEBO Emitter-Base Breakdown Voltage ４．５ Ｖ HFE(1) DC Current Gain ４０ １５０ IE=10μA，IC=0 VCE=1V, IC=10mA HFE(2) ３０ VCE=2, IC=100mA VCE(sat) Collector- Emitter Saturation Voltage ０．２ Ｖ IC=10mA, IB=1mA VBE(sat) Base-Emitter Saturation Voltage ０．７ Ｖ IC=10mA, IB=1mA ｎＡ VCB=25V, IE=0 ｎＡ VEB=4.5V, IC=0 DC Current Gain ICBO Collector Cut-off Current １００ IEBO Emitter Cut-off Current Cob Output Capacitance １００ ４ IC=10μA, IE=0 IC=10mA, IB=0 ｐＦ VCB=5V, IE=0，f=1ＭＨｚ