VISHAY SFH6916

SFH6916
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, Quad Channel, SOP-16,
Half Pitch Mini-Flat Package
Features
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 VRMS (1.0 s)
• High Collector-Emitter Voltage,
VCEO = 70 V
• Low Saturation Voltage
• Fast Switching Times
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.050 " (1.27 mm) Spacing
Agency Approvals
i179076
A 1
16 C
C 2
15 E
A 3
14 C
C 4
13 E
A
5
12 C
C
6
11 E
A
7
10 C
C
8
9 E
• UL File #E52744 System Code U
The coupling devices are designed for signal transmission between two electrically separated circuits.
Description
Order Information
The SFH6916 has a GaAs infrared emitter, which is
optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 16-pin 50 mil lead
pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation
voltage.
Part
Remarks
SFH6916
CTR 50 - 300 %, SMD-16
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC Forward current
IF
50
mA
IFSM
2.5
A
Pdiss
80
mW
Surge forward current
Total power dissipation
Document Number 83687
Rev. 1.4, 20-Apr-04
Test condition
tp ≤ 10 µs
Unit
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SFH6916
VISHAY
Vishay Semiconductors
Output
Symbol
Value
Unit
Collector-emitter voltage
Parameter
Test condition
VCE
70
V
Emitter-collector voltage
VEC
7.0
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
3750
VRMS
Creepage
≥ 5.33
mm
Clearance
≥ 5.08
mm
Comparative tracking index per
DIN IEC 112/VDEo 303, part 1
≥ 175
Collector current
tp ≤ 1.0 ms
Total power dissipation per
channel
Coupler
Parameter
Test condition
Isolation test voltage between
emitter and detector (1.0 s)
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
≥
Ω
Ω
Storage temperature range
Tstg
- 55 to + 125
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Tj
100
°C
260
°C
70
mW
Junction temperature
Soldering temperature
max. 10 s dip soldering distance
to seating plane ≥ 1.5 mm
Total power dissipation
Ptot
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Tamb = 25 °C (except where noted)
Typ.
Max
Forward voltage
Parameter
IF = 5 mA
Test condition
VF
1.15
1.4
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
CO
Thermal resistance
Symbol
Min
Unit
CO
14
pF
Rthja
1000
K/W
Output
Parameter
Test condition
Collector-emitter leakage
current
VCE = 20 V
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
Thermal resistance
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2
Symbol
Min
Typ.
ICEO
Max
Unit
100
nA
CCE
2.8
pF
Rthja
500
K/W
Document Number 83687
Rev. 1.4, 20-Apr-04
SFH6916
VISHAY
Vishay Semiconductors
Coupler
Parameter
Test condition
Collector-emitter saturation
voltage
IF = 20 mA, IC = 1.0 mA
Coupling capacitance
f = 1.0 MHz
Symbol
Typ.
Max
Unit
VCESAT
Min
0.1
0.4
V
CC
1.0
pF
Current Transfer Ratio
Parameter
Current Transfer Ratio
Test condition
IF = 5.0 mA, VCC = 5.0 V
Symbol
Min
Typ.
CTR
50
300
Symbol
Min
Typ.
Max
Unit
%
Switching Characteristics
Switching Operation (without saturation)
Parameter
Test condition
Max
Unit
Rise time
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
tr
4.0
µs
Fall time
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
tf
3.0
µs
Turn on time
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
ton
5.0
µs
Turn off time
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
toff
4.0
µs
Switching Operation (with saturation)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rise time
IF = 16.0 mA, VCC = 5.0 V,
RL = 1.9 kΩ
tr
15
µs
Fall time
IF = 16.0 mA, VCC = 5.0 V,
RL = 1.9 kΩ
tf
0.5
µs
Turn on time
IF = 16.0 mA, VCC = 5.0 V,
RL = 1.9 kΩ
ton
1.0
µs
Turn off time
IF = 16.0 mA, VCC = 5.0 V,
RL = 1.9 kΩ
toff
30
µs
IF
IF
RL=100 Ω
IC
RL=1.9 kΩ
IC
VCC = 10 V
VCC = 5 V
50 Ω
50 Ω
isfh6916_02
isfh6916_01
Fig. 2 Switching Operation (with Saturation)
Fig. 1 Switching Operation (without Saturation)
Document Number 83687
Rev. 1.4, 20-Apr-04
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SFH6916
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100.000
1.6
T = –25°C
1.4
T = 0°C
1.1
T = 100°C
T = 75°C
0.9
T = 50°C
T = 25°C
Collector Current (mA)
Forward Voltage, VF (V)
T = –25°C
isfh6916_03
0.10
1.00
10.00
Forward Current, IF (mA)
100.00
IF = 5.0 mA
IF = 2.0 mA
0.010
IF = 1.0 mA
1.4
Normalized Output Current, CTR
Collector Current, IC (mA)
0.100
Fig. 6 Collector Current vs. Collector-Emitter Saturation Voltage
80
70
60
IF = 30 mA
50
IF = 20 mA
40
IF = 15 mA
30
IF = 10 mA
20
IF = 5 mA
10
0
0
2
4
6
8
Collector to Emitter Voltage, VCE (V)
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–60
Normalized to 1.0 at TA = 25 °C
IF = 1.0 mA, VCE = 5.0 V
–40
–20
0
20
40
60
Ambient Temperature, TA (°C)
80 100
isfh6916_07
Fig. 4 Collector Current vs. Collector Emitter Voltage
1000.0
24 V
40 V
100.0
12 V
10.0
1.0
–60
–40
isfh6916_05
–20 0
20
40
60
Ambient Temperature, TA (°C)
80 100
Fig. 5 Collector to Emitter Dark Current vs. Ambient Temperature
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Fig. 7 Normalized Output Current vs. Ambient Temperature
Normalized Output Current, CTR
isfh6916_04
Collector to Emitter Dark Current, ICEO (nA)
IF = 25 mA
IF = 10 mA
isfh6916_06
Fig. 3 Diode Forward Voltage vs. Forward Current
4
1.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
Collector-emitter Saturation Voltage, VCE (sat) (V)
0.6
0.01
10.000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–60
isfh6916_08
Normalized to 1.0 at TA = 25 °C
IF = 1.0 mA, VCE = 5.0 V
–40
–20
0
20
40
60
80 100
Ambient Temperature, TA (°C)
Fig. 8 Normalized Output Current vs. Ambient Temperature
Document Number 83687
Rev. 1.4, 20-Apr-04
SFH6916
VISHAY
Vishay Semiconductors
Current Transfer Ratio, CTR (%)
300
VCE = 5.0 V
Input
250
Typical for
CTR=250%
200
toff
ton
tpdoff
tpdon
150
Output
Typical for
CTR=150%
100
50
0
0.1
1.0
10.0
Forward Current, IF (mA)
50 100.0
td
tf
ts
tr
10%
10%
50%
50%
90%
90%
isfh6916_12
isfh6916_09
Fig. 12 Switching Time Measurement
Fig. 9 Current Transfer Ratio vs. Forward Current
Switching Time, (µs)
100.0
ton
10.0
toff
td
ts
1.0
VCC = 5.0 V
IC = 2.0 mA
0.1
0
500
1000
1500
2000
Load Resistance, RL (ohm)
isfh6916_10
Fig. 10 Switching Time vs. Load Resistance
Switching Time, (µs)
1000
100
IF = 5.0 mA
VCC = 5.0 V
TA = 25 °C
CTR = 150%
tf
ts
10
tr
td
1
0
100
1000
10000
Load Resistance, RL (Ω)
100000
isfh6916_11
Fig. 11 Switching Time vs. Load Resistance
Document Number 83687
Rev. 1.4, 20-Apr-04
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SFH6916
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
R .010 (.25)
0.19 (4.83)
0.17 (4.32)
.050 (1.27)
.014 (.36)
.036 (.91)
.200 (5.08)
.290 (7.37)
0.434 (11.02)
0.414 (10.52)
ISO Method A
i178043
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0.055 (1.40)
0.045 (1.14)
40°
10°
0.008 (0.20)
0.004 (0.10)
0.080 (2.03)
0.075 (1.91)
0.018 (0.46)
0.014 (0.36)
0.220 (5.59)
0.200 (5.08)
0.017 (0.43)
0.013 (0.33)
0.034 (0.87)
0.024 (0.61)
.045 (1.14)
0.000 (0.00)
0.005 (0.13)
0.200 (5.08)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
Document Number 83687
Rev. 1.4, 20-Apr-04
SFH6916
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83687
Rev. 1.4, 20-Apr-04
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