IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS(on) ≤ 0.47 Ω VDSS TJ = 25°C to 150°C 600 V PDC = 880 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 18 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 18 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 880 W 440 W 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W Maximum Ratings IS = 0 DRAIN PDC GATE PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 RDS(on) gfs 3.2 V 4.0 TJ = 25C TJ =125C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 50V, ID = 0.5ID25, pulse test 0.44 4.0 5.5 V ±100 nA 50 1 µA mA 0.47 5.2 -55 +175 -55 Tstg 1.6mm(0.063 in) from case for 10 s Ω S 175 TJM Weight max. 600 TJ TL typ. °C °C + 175 SG2 SD1 SD2 Features Characteristic Values (TJ = 25°C unless otherwise specified) min. SG1 °C 300 °C 3.5 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density IXZ316N60 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1 RG Ciss Coss 1930 pF 160 pF 16 pF 33 pF 4 ns 4 ns 4 ns 6 ns VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) Toff Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2% Ω Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 200 Trr 18 A 108 A 1.5 V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZ316N60 Z-MOS RF Power MOSFET Fig. 1 Fig. 2 Typical Output Characteristics Typical Transfer Characteristics 20 50 9V - 12V 45 7V ID, Drain Currnet (A) ID , Drain Current (A) 40 35 30 25 20 15 10 15 6.5V 10 6V 5 5.5V 5 0 0 4 5 6 7 8 9 10 11 5V 0 12 20 100 120 Extended Typical Output Characteristics 80 Top 14 ID , Drain Currnet (A) Gate-to-Source Voltage (V) 80 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 300V, ID = 9A, IG= 3m A 16 12 10 8 6 4 60 40 Bottom 10V - 12V 9V 8V 7.5V 7V 6.5V 6V 5.5V 20 2 0 0 0 20 40 60 0 80 Fig. 5 V D S vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 1 0 60 120 180 240 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) Gate Charge (nC) Capacitance (pF) 60 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Fig. 3 40 300 VDS Voltage (V) 360 420 480 120 IXZ316N60 Z-MOS RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source Doc #dsIXZ316N60 REV 08/09 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com