DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 25 A IDM Tc = 25°C, pulse width limited by TJM 150 A IAR Tc = 25°C 25 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 590 W 284 W 3.0 W RthJC 0.25 C/W RthJHS 0.53 C/W PDC Tc = 25°C Derate 1.9W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions TJ = 25°C unless otherwise specified VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) gfs min. typ. 200 2.5 13 TL Weight 3.0 16 -55 1.6mm(0.063 in) from case for 10 s ID25 = 25 A RDS(on) = 0.13 Ω PDC = 590 W SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power 5.5 V ±100 nA 50 1 µA mA .13 Ω 18 S +175 °C °C +175 SG2 Features V 175 TJM Tstg SG1 max. -55 TJ 200 V DRAIN Characteristic Values VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test = GATE IS = 0 PDHS VDSS °C 300 °C 2 g • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching at frequencies to 100MHz • Easy to mount—no insulators needed • High power density DE275-201N25A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. max. typ. 0.3 Ω 2500 pF 265 pF 42 pF 21 pF 5 ns 5 ns 8 ns Toff 8 ns Qg 81 nC 14 nC 42 nC RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) Qgs VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. typ. max. 25 A 150 A 2.0 V 300 Trr ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-201N25A RF Power MOSFET Fig. 1 Fig. 2 Typical Output Characteristics Typical Transfer Characteristics V DS = 60V, PW = 4uS 140 120 Top ID, Drain Currnet (A) ID, Drain Current (A) 120 100 80 60 40 100 80 Bottom 60 40 20 20 0 0 5 6 7 8 9 0 10 10 20 40 50 60 Fig. 4 Gate Charge vs. Gate-to-Source Voltage VD S vs.Capacitance V DS = 100V, ID = 12.5A 10000 16 Ciss 14 12 Capacitance (pF) Gate-to-Source Voltage (V) 30 V DS , Drain-to-Source Voltage (V) V GS , Gate-to Source Voltage (V) Fig. 3 9-10V 8V 7.5V 7V 6.5V 6V 5.5V 5V 10 8 6 4 1000 Coss Crss 100 10 2 0 1 0 50 100 Gate Charge (nC) 150 0 20 40 60 80 100 VDS Voltage (V) 120 140 160 DE275-201N25A RF Power MOSFET Fig. 5 Package Drawing Source Source Gate Drain Source Source DE275-201N25A RF Power MOSFET 201N25A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff D1crs Roff Rd D2crs 20 GATE 6 8 1 5 Don 2 M3 Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-201n25a.html Net List: ********** *SYM=POWMOSN .SUBCKT 201N25A 10 20 30 * TERMINALS: D G S * 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .13 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0260 Rev 4 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com