IXYS IXZ12210N50L

IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
VDSS
=
500 V
ID25
=
10 A
125V (operating)
175MHz
Note: All data is per the IXZ1210N50L single ended device unless otherwise
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
10
A
IDM
Tc = 25°C, pulse width limited by
TJM
60
A
IAR
Tc = 25°C
16
A
EAR
Tc = 25°C
TBD
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤
VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
5
V/ns
>200
V/ns
Per Device
PDC
PDHS
Tc = 25°C, Derate 6.0W/°C above
25°C
PDAMB
Tc = 25°C
mJ
Total
180
360
W
150
300
W
10
W
RthJC
0.83
0.42
C/W
RthJHS
1.00
0.50
C/W
min.
typ.
VDSS
VGS = 0 V, ID = 4 ma
VGS(th)
VDS = VGS, ID = 250µΑ
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8VDSS
VGS=0
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.0
gfs
VDS = 50 V, ID = 0.5ID25, pulse test
3.8
500
3.5
4.83
-55
TJM
-55
Tstg
TL
Weight
1.6mm(0.063 in) from case for 10 s
• IXYS RF Low Capacitance Z-MOSTM
V
TJ = 25C
TJ =125C
TJ
Features
max.
6.5
V
±100
nA
50
1
µA
mA
Process
• Very low insertion inductance (<2nH)
Advantages
• High Performance RF Package
• Easy to mount—no insulators needed
• Standard RF Package
Ω
S
+175
°C
+175
°C
+ 175
°C
300
°C
4
g
(1) Thermal specifications are for the package, not per transistor
IXZ12210N50L
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(MAX),
f = 1 MHz
Crss
Td(off)
383
404
pF
48
60
105
pF
6
11
13
pF
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
Toff
VHF COMMUNICATIONS
Gps
min.
16
ns
4
ns
5
ns
6
ns
typ.
Gps(1)
60
Drain Efficiency VDD= 50V, Pout=200W, f=175MHz
%
TBD
min.
VDD=120V, POUT=475W, F=128MHz
db
TBD
Load Mismatch VDD= 150V, Pout=300W, f=175MHz
3T MRI
max.
TBD
VDD= 50V, Pout=200W, f=175MHz
Drain Efficiency VDD= 50V, Pout=200W, f=175MHz
max.
366
Td(on)
Ton
typ.
typ.
max.
TBD
db
TBD
%
IXZ12210N50L
RF Power MOSFET
IXZ12210N50L Capacitance Verses Vds
Capacitance in pF
10000
Ciss
1000
Coss
100
Crss
10
1
0
50
100
150
200
250
VDS
300
350
400
450
IXZ12210N50L
RF Power MOSFET
Doc #dsIXZ12210N50L REV X1
© 2006 IXYS RF
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
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4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
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5,381,025
5,640,045
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6,727,585
A IXYS
Company
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Fort Collins, CO USA 80526
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