IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS(on) ≤ 0.34 Ω VDSS TJ = 25°C to 150°C 500 V PDC = 880 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 19 A IDM Tc = 25°C, pulse width limited by TJM 95 A IAR Tc = 25°C 19 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 880 W 440 W 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W Maximum Ratings IS = 0 PDC PDHS Tc = 25°C PDAMB Tamb = 25°C Symbol Test Conditions VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 3.5 SG1 4.9 gfs VDS = 50 V, ID = 0.5ID25, pulse test 5.0 SG2 SD1 SD2 Features max. V TJ = 25C TJ =125C VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 6.5 V ±100 nA 50 1 µA mA .32 .34 Ω 5.4 6.0 S +175 °C • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages -55 TJ 175 TJM -55 Tstg Weight typ. 500 RDS(on) TL GATE Characteristic Values (TJ = 25°C unless otherwise specified) min. VDSS DRAIN 1.6mm(0.063 in) from case for 10 s °C + 175 °C 300 °C 3.5 g • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density IXZ318N50 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1 RG Ciss Coss 1950 pF 175 pF 17 pF 33 pF 4 ns 4 ns 5 ns 6 ns VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) Toff Source-Drain Diode Ω Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2% typ. max. 200 Trr 19 A 114 A 1.5 V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 IXZ318N50 Z-MOS RF Power MOSFET Fig. 2 Fig. 1 Typical Transfer Characteristics V DS = 50V, P.W. = 20µS Typical Output Characteristics 70 35 60 30 8.5V ID , Drain Currnet (A) ID, Drain Current (A) 9V - 15V 50 40 30 20 25 8V 20 15 7.5V 10 10 5 0 0 7V 6.5V 5 6 7 8 9 10 11 12 13 14 0 15 25 125 Extended Typical Output Characteristics 100 Top 14 Gate-to-Source Voltage (V) 100 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 9.5A, IG = 3m A 16 ID, Drain Currnet (A) 12 10 8 6 4 80 60 Bottom 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V 40 20 2 0 0 0 20 40 60 0 80 Gate Charge (nC) VDS vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 1 0 50 100 150 200 250 VDS Voltage (V) 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) Fig. 5 Capacitance (pF) 75 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Fig. 3 50 300 350 400 120 IXZ318N50 Z-MOS RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source Doc #dsIXZ318N50 REV 07/09 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com