DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 12 A IDM Tc = 25°C, pulse width limited by TJM 72 A IAR Tc = 25°C 12 A EAR Tc = 25°C 30 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 940 W 425 W 4.5 W RthJC 0.16 C/W RthJHS 0.35 C/W IS = 0 PDC PDHS Tc = 25°C Derate 3.7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test min. 1000 4.0 V 4.7 6.7 5.5 V ±100 nA 50 1 µA mA 1.05 Ω 8.0 S +175 °C 175 TJM -55 Tstg Weight max. -55 TJ TL typ. 1.6mm (0.063 in) from case for 10 s = 1000 V ID25 = 12 A RDS(on) ≤ 1.05 Ω PDC = 940 W DRAIN GATE SG1 SG2 SD1 SD2 Features Characteristic Values TJ = 25°C unless otherwise specified VDSS °C +175 °C 300 °C 3 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching at frequencies to 50MHz • Easy to mount—no insulators needed • High power density DE375-102N12A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. 0.3 Ω 2500 pF 110 pF 25 pF 33 pF 5 ns 3 ns 5 ns 8 ns 77 nC 16 nC 42 nC RG Ciss Coss max. VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 72 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.5 V Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V typ. max. 200 ns 0.6 µC 7 A IRM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE375-102N12A RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics V DS = 100V, PW = 40uS 30 45 Top 40 25 ID, Drain Currnet (A) ID , Drain Current (A) Typical Output Characteristics 35 30 25 20 15 10 Bottom 20 10V 9V 8V 7V 6.5V 6V 15 10 5 5 0 0 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 10 20 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 500V, ID = 6A 16 45 14 40 12 ID , Drain Currnet (A) Gate-to-Source Voltage (V) 80 100 120 Extended Output Characteristics Top 10 8 6 4 2 35 Bottom 30 10V 9V 8V 7V 6.5V 6V 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Gate Charge (nC) VDS vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 1 0 100 200 300 400 500 VDS Voltage (V) 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) Fig. 5 Capacitance (pF) 60 VDS, Drain-to-Source Voltage (V) V GS, Gate-to Source Voltage (V) Fig. 3 40 600 700 800 120 DE375-102N12A RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source DE375-102N12A RF Power MOSFET 102N12A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de375-102n12a.html Net List: .SUBCKT 102N12A 10 20 30 * TERMINALS: D G S * 1000 Volt 12 Amp 0.95 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 0.95 Doc #9200-0249 Rev 6 DCOS 3 1 D3 © 2009 IXYS RF RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) An IXYS Company .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) 2401 Research Blvd., Suite 108 Collins, CO USA 80526 .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) Fort 970-493-1901 Fax: 970-493-1903 .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) Email: [email protected] Web: http://www.ixyscolorado.com .ENDS