NSS1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com −100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 2,4 1 BASE Features 3 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Max Unit VCEO −100 Vdc Collector-Base Voltage VCB −140 Vdc Emitter-Base Voltage VEB −7.0 Vdc Base Current − Continuous IB 1.0 Adc Collector Current − Continuous Collector Current − Peak IC 2.0 3.0 Adc Total Power Dissipation Total PD @ TA = 25°C (Note 1) Total PD @ TA = 25°C (Note 2) PD Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 Max Rating Collector-Emitter Voltage W SOT−223 CASE 318E STYLE 1 A Y W 1C200 G 2.0 0.8 AYW 1C200G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 °C C THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RqJA Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 64 155 Unit B C E °C/W 1 2 3 Top View Pinout 260 °C September, 2010 − Rev. 2 Package Shipping† NSS1C200T1G SOT−223 (Pb−Free) 1000/ Tape & Reel NSS1C200T3G SOT−223 (Pb−Free) 4000/ Tape & Reel Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material 2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material © Semiconductor Components Industries, LLC, 2010 ORDERING INFORMATION 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C200MZ4/D NSS1C200MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −100 Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −140 Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −7.0 Vdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO −100 nAdc Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO −50 nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) 150 120 80 50 360 V −0.040 −0.080 −0.125 −0.220 V −0.950 V −0.850 Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 3.0 V, f = 1.0 MHz) Cibo 200 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF 120 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 NSS1C200MZ4 TYPICAL CHARACTERISTICS 500 VCE = 2 V 150°C 400 300 25°C 200 −55°C 100 0 0.001 0.01 0.1 1 400 300 −55°C 100 0 10 0.001 0.01 Figure 2. DC Current Gain Figure 3. DC Current Gain 150°C 25°C −55°C 0.001 0.01 0.1 1 IC/IB = 20 150°C 0.1 −55°C 0.01 10 25°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 1 10 Figure 5. Collector−Emitter Saturation Voltage 1.2 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage 1.0 0.8 −55°C 0.2 10 1 0.1 0.4 1 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.6 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 25°C 200 1 0.01 VCE = 4 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 500 25°C 150°C 0.001 0.01 0.1 1 10 IC/IB = 50 1.0 0.8 −55°C 25°C 0.6 0.4 0.2 150°C 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage http://onsemi.com 3 10 NSS1C200MZ4 1.2 1 VCE = 2 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.001 0.01 0.1 1 10 IC = 0.1 A TJ = 25°C 0.0001 0.001 0.01 0.1 1 IB, BASE CURRENT (A) Figure 8. Base−Emitter Voltage Figure 9. Collector Saturation Region 120 Cob, OUTPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) 0.5 A 0.1 IC, COLLECTOR CURRENT (A) TJ = 25°C ftest = 1 MHz 300 200 100 0 1 2 3 4 5 6 7 80 60 40 20 0 10 20 30 40 50 60 70 80 VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 90 100 10 TJ = 25°C ftest = 1 MHz VCE = 10 V 60 40 20 0 80 VBE, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) 100 TJ = 25°C ftest = 1 MHz 100 0 8 120 fTau, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1.0 A 0.01 400 0 3.0 A 2.0 A 0.001 0.01 0.1 0.5 mS 1 1 mS 10 mS 0.1 TJ = 25°C 0.01 1 100 mS 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 100 NSS1C200MZ4 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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