ETC AM42-0002

AM42-0002
GaAs MMIC VSAT Power Amplifier 1.4W
14.0 - 14.5 GHz
Features
•
•
•
•
•
•
CR-15
High Linear Gain: 22 dB Typ.
High Saturated Output Power: +31.5 dBm Typ.
High Power Added Efficiency: 22% Typ.
50Ω=Input/Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
-C .70
.530
.085
10
10 .050 MIN.
X
9
8
7
6
-B.159
.328 ± .010
.318 ± .010
Description
2X o .096 THRU
o.004 M A B C
M/A-COM’s AM42-0002 is a three-stage MMIC linear power
amplifier in a ceramic bolt down style hermetic package. The
AM42-0002 employs a fully matched chip with interally
decoupled Gate and Drain bias networks and an output power
detector. The AM42-0002 is designed to be operated from a
constant voltage Drain supply.
1
2
3
4
4X .06 X 45°
5
.010 SQ.
ORIENTATION TAB
.115 ± .010
10 .010 ± .003
X
CHAMFER
4X .050
4X .100
.33
CERAMIC
.005 ± .002
The AM42-0002 is designed for use as an output stage or a
driver, in applications for VSAT systems. This design is fully
monolithic and requires a minimum of external components.
M/A-COM’s AM42-0002 is fabricated using a mature 0.5
micron GaAs MESFET process. The process features full
passivation for increased performance and reliability. This
product is 100% RF tested to ensure compliance to performance
specifications.
.040
.090 MAX
-A BASE PLATE
.030
Notes: (unless otherwise specified)
1. Dimensions are in inches.
2. Tolerance: .XXX = ± 0.005
.XX = ± 0.010
Ordering Information
Part Number
AM42-0002
Package
Ceramic Bolt Down Package
Electrical Specifications: TC = +25°C, VDD = +9V, VGG = -5.0V, Z0 = 50Ω,
Ω,=
Ω,=Frequency = 14.0-14.5 GHz
Parameter
Linear Gain
Input VSWR
Output VSWR
Saturated Output Power
Output Power @
Abbv.
GL
VSWRIN
VSWROUT
PSAT
P1dB
Test Conditions
PIN ≤ 0 dBm
PIN ≤=0=dBm
—
PIN = +14 dBm
Units
dB
—
—
dBm
dBm
Min.
19
—
—
30.5
—
Typ.
22
2.5:1
2.7:1
31.5
29.5
Max.
—
2.7:1
—
—
—
Output Third Order Intercept
Power Added Efficiency
Bias Currents
IP3
PAE
IDD
(Refer to Note 1)
PIN = +14 dBm
PIN = +14 dBm
dBm
%
mA
—
—
—
41
22
950
—
—
1400
Thermal Resistance
Detector Output Voltage
θJC
Vdet
25°C Heat Sink
RL=10KΩ=min.=
°C/W
V
—
—
9.5
+3.5
—
—
IP3 is measured with two +21 dBm output tones @ 1 MHz spacing.
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 3.0
1
GaAs MMIC VSAT Power Amplifier 1.4W, 14.0 - 14.5 GHz
Absolute Maximum Ratings1,2,3,4
Parameter
VDD
VGG
Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Ids
Typical Bias Configuration3,4,7,8
Absolute Maximum
12 Volts
-10 Volts
13.2 W
+23 dBm
150°C
-65°C to +150°C
1900 mA
1. Operation of this device outside any of these limits may cause
permanent damage.
2. Case Temperature (TC) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG),
followed by connection +9 volts to pin 6 (VDD). Note sequence.
4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the
ouput port is a short circuit.
7. For optimum IP3 performance, the VDD bypass capacitors should
be placed within 0.5 inches of pin 6.
8. Resistor and capacitors surrounding the amplifier are suggestions
and not included as part of the AM42-0002.
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
AM42-0002
10 K Ω
V
det
7
V
µF
DD 3.3
6
0.01 µ F
8
3
IN
OUT
AM42-0002
0.01 µ F
GND
1,2,5,9,10
4
V
GG
Pin No.
Pin Name
Description
1
GND
DC and RF Ground
2
GND
DC and RF Ground
3
IN
4
VGG
Gate Supply
5
GND
DC and RF Ground
6
VDD
Voltage Drain Supply
7
Vdet
Output Power Detector
8
OUT
RF Output
9
GND
DC and RF Ground
10
GND
DC and RF Ground
RF Input
V 3.0
2
GaAs MMIC VSAT Power Amplifier 1.4W, 14.0 - 14.5 GHz
AM42-0002
Typical Performance @ +25°C
Test Conditions are listed in the section “Electrical Specifications”.
25
Linear Gain vs. Frequency
0
Input and Output Return Loss vs. Frequency
Return Loss (dB)
Linear Gain (dB)
S11
15
5
-5
-15
-5
-10
S22
-15
-20
10
12
14
16
10
18
6
50
32
40
30
30
28
20
26
10
14
16
Detector Voltage vs. Output Power
@ 14.25 GHz
4
3
2
1
0
0
24
12
19
18
21
23
Output Power vs. Frequency
@ PIN = +14dBm
50
32
27
31
29
33
Power Added Efficiency vs. Frequency
@ PIN=+14dBm
40
30
PAE (%)
Output Power (dBm)
25
POUT (dBm)
Input Power (dBm)
34
18
5
VDET (V)
Output Power (dBm)
Output Power & PAE vs. Input Power
@ 14.25 GHz
10
16
Frequency (GHz)
Frequency (GHz)
34
14
12
28
30
20
26
10
22
20
0
12
13
14
15
16
Frequency (GHz)
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
12
13
14
15
16
Frequency (GHz)
V 3.0
3