AM42-0007 GaAs MMIC VSAT Power Amplifier 2.0W 14.0 - 14.5 GHz Features • • • • • • • CR-15 High Linear Gain: 22 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 22% Typ. High P1dB: 32 dBm Typ. 50Ω=Input/Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package -C .70 .530 .085 10 10 .050 MIN. X 9 8 7 6 -B.159 .328 ± .010 .318 ± .010 2X o .096 THRU o.004 M A B C Description 1 M/A-COM’s AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply. 2 3 4 4X .06 X 45° 5 .010 SQ. ORIENTATION TAB .115 ± .010 10 .010 ± .003 X CHAMFER 4X .050 4X .100 .33 CERAMIC .005 ± .002 .040 .090 MAX -A - M/A-COM’s AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications. BASE PLATE .030 The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components. Notes: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = ± 0.005 .XX = ± 0.010 Ordering Information Part Number AM42-0007 Package Ceramic Bolt Down Package Electrical Specifications: TC = +25°C, VDD = +9V, VGG = -5.0V, Z0 = 50Ω, Ω,= Ω,=Frequency = 14.0-14.5 GHz Parameter Linear Gain Input VSWR Output VSWR Abbv. GL VSWRIN VSWROU T Test Conditions PIN ≤ 0 dBm PIN ≤ 0 dBm PIN ≤ 0 dBm Units dB — — Min. 19 — — Typ. 22 2.5:1 2.7:1 Max. — 2.7:1 — Saturated Output Power Output Power @ PSAT P1dB PIN = +14 dBm — dBm dBm — 31 33 32 — — Output IP3 Power Added Efficiency Bias Currents IP3 PAE IGG (Refer to Note 1) PIN = +14 dBm PIN = +14 dBm dBm % mA — — 41 22 18 — — 25 Thermal Resistance Detector Output Voltage θJC Vdet 25°C Heat Sink RL=10KΩ, POUT =+31dBm °C/W V — — 9.5 +3.5 — — IP3 is measured with two +24 dBm output tones @ 1 MHz spacing. Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. V 4.0 1 GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz Absolute Maximum Ratings1,2,3,4 Parameter VDD VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Ids Typical Bias Configuration3,4,7 Absolute Maximum 12 Volts -10 Volts 13.2 W +23 dBm 150°C -65°C to +150°C 2100 mA 1. Operation of this device outside any of these limits may cause permanent damage. 2. Case Temperature (TC) = +25°C. 3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 5. No dc bias voltage appears at the RF ports. 6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. AM42-0007 10 K Ω V det 7 V DD 3.3 µ F 6 0.01 µ F 8 3 IN OUT AM42-0007 0.01 µ F GND 1,2,5,9,10 4 V GG Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Pin Name GND GND IN VGG GND VDD Vdet OUT GND GND Description DC and RF Ground DC and RF Ground RF Input Gate Supply DC and RF Ground Voltage Drain Supply Output Power Detector RF Output DC and RF Ground DC and RF Ground V 4.0 2 GaAs MMIC VSAT Power Amplifier 2.0W, 14.0 - 14.5 GHz AM42-0007 Typical Performance @ +25°C Test Conditions are listed in the section “Electrical Specifications”. Linear Gain vs. Frequency Input and Output Return Loss vs. Frequency 25 Magnitude (dB) Linear Gain (dB) 25 15 5 -5 15 5 S11 S22 -5 -15 -15 10 12 14 16 10 18 12 35 Output Power vs. Input Power @ 14.25 GHz 4 31 30 PAE 29 20 27 0 4 8 12 3 2 10 1 0 0 25 16 19 PIN (dBm) 35 Output Power vs. Frequency @ PIN = +14 dBm 50 21 23 25 27 POUT (dBm) 29 31 33 Power Added Efficiency vs. Frequency @ PIN = +14 dBm 40 PAE (%) 33 POUT (dBm) Detector Voltage vs. Output Power @ 14.25 GHz 5 40 VDET (V) POUT (dBm) 6 50 POUT 33 18 16 14 Frequency (GHz) Frequency (GHz) 31 29 30 20 10 27 0 25 12 13 14 15 16 Frequency (GHz) Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 12 13 14 15 16 Frequency (GHz) V 4.0 3