180RKI...PbF, 181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level TO-209AB (TO-93) TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) • Controlled DC power supplies 180 A • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 180 A 80 °C 285 IT(RMS) ITSM I2t 50 Hz 3800 60 Hz 4000 50 Hz 72 60 Hz 66 VDRM/VRRM Typical tq TJ A kA2s 400 to 1000 V 100 μs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS PART NUMBER 180RKI 181RKI VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 100 1000 1100 Document Number: 94382 Revision: 03-Nov-09 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 30 www.vishay.com 1 180RKI...PbF, 181RKI...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 180 A 80 °C Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave Maximum RMS on-state current IRMS DC at 79 °C case temperature 285 t = 10 ms 3800 Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms I2√t 100 % VRRM reapplied No voltage reapplied 4000 Sinusoidal half wave, intial TJ = TJ maximum 3660 72 66 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 720 VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.83 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.89 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.92 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.81 Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 56 Low level value of threshold voltage Maximum on-state voltage A 3500 61 t = 8.3 ms Maximum I2√t for fusing No voltage reapplied 600 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS VALUES UNITS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 300 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/μs, VR = 100 V, dV/dt = 20 V/μs 100 μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum rated VDRM/VRRM applied 30 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94382 Revision: 03-Nov-09 180RKI...PbF, 181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 10 2.0 TJ = TJ maximum, tp ≤ 5 ms 20 V TJ = - 40 °C 130 - TJ = 25 °C 65 150 TJ = 25 °C IGD TJ = TJ maximum DC gate voltage not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = 125 °C DC gate current not to trigger MAX. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = 125 °C VGT TYP. TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 35 - 2.0 - 1.2 2.5 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.15 Maximum thermal resistance, junction to ambient RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) °C K/W Mounting force, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet N·m (lbf · in) g TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.050 0.032 120° 0.063 0.059 90° 0.080 0.082 60° 0.118 0.124 30° 0.225 0.228 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94382 Revision: 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 3 180RKI...PbF, 181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products 130 130 RthJC (DC) = 0.15 K/W 120 110 Ø Conduction angle 100 90 80 30° 60° 120° 90° Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 0.15 K/W 120 110 100 30° 90 DC 80 60° 120° 180° 0 20 40 60 0 80 100 120 140 160 180 200 Average On-State Current (A) 94382_01 180° 90° 70 70 50 100 150 200 250 300 Average On-State Current (A) 94382_02 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 240 Ø 40 Conduction angle 20 TJ = 125 °C K/ R -Δ 60 W 80 K/ 100 0.6 .1 120 K/ W 140 =0 RMS limit A 140 3 180 160 R thS 160 0. 200 W 180 220 K/ 180° 120° 90° 60° 30° 2 200 Maximum Average On-State Power Loss (W) 240 220 0. Maximum Average On-State Power Loss (W) Ø Conduction period W 0.8 120 K/W /W 1K 100 80 60 1.5 40 2 K/W K/W 20 0 0 0 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 94382_03a 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 94382_03b Fig. 3 - On-State Power Loss Characteristics Ø Conduction period 50 TJ = 125 °C K/ W R -Δ 100 0.3 W K/ 150 K/ W 250 1 RMS limit 2 0. 200 0. = 250 300 SA DC 180° 120° 90° 60° 30° 300 Maximum Average On-State Power Loss (W) 350 R th Maximum Average On-State Power Loss (W) 350 200 0.6 150 1 K/W 0.8 K/ 100 W 1.5 K/W 50 0 K/W 2 K/W 0 0 94382_04a 50 100 150 200 250 Average On-State Current (A) 300 0 94382_04b 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94382 Revision: 03-Nov-09 180RKI...PbF, 181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A 4000 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 3500 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) 4000 Vishay High Power Products 3000 2500 2000 1500 1 10 3500 3000 2500 2000 1500 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 94382_05 Instantaneous On-State Current (A) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 0.1 1 Pulse Train Duration (s) 94382_06 Fig. 6 - Maximum Non-Repetitive Surge Current 10 000 TJ = 25 °C 1000 TJ = 125 °C 100 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On-State Voltage (V) 94382_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value RthJC = 0.15 K/W (DC operation) 0.1 0.01 0.001 0.001 94382_08 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal impedance ZthJC Characteristics Document Number: 94382 Revision: 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 5 180RKI...PbF, 181RKI...PbF Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products 10 Rectangular gate pulse (a) Recommended load line for rated dI/dt: 20 V, 30 Ω, tr ≤ 0.5 μs, tp ≥ 6 μs (b) Recommended load line for ≤ 30 % rated dI/dt: 15 V, 40 Ω, tr ≤ 1 μs, tp ≥ 6 μs VGD 0.1 0.001 (a) TJ = 40 °C TJ = 125 °C 1 (1) PGM = 12 W, tp = 5 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms (4) PGM = 200 W, tp = 300 μs (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) Frequency limited by PG(AV) IGD 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) 94382_09 Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 18 1 RKI 100 PbF 1 2 3 4 5 1 - 2 - IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (gate and auxiliary cathode leads) 3 - 1 = Fast-on terminals (gate and auxiliary cathode leads) Thyristor 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 www.vishay.com/doc?95077 For technical questions, contact: [email protected] Document Number: 94382 Revision: 03-Nov-09 Outline Dimensions Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) Glass metal seal 19 (0.75) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) Red silicon rubber C.S. 0.51 mm2 (0.0008 s.i.) Red cathode 213.5 ± 10 (8.41 ± 0.39) White gate 238.5 ± 10 (9.39 ± 0.39) Red shrink 75 (2.95) MIN. White shrink Ø 28.5 (1.12) MAX. 28.5 (1.12) MAX. 16 (0.63) MAX. 21 (0.83) MAX. SW 32 3/4"-16UNF-2A 35 (1.38) MAX. 0° to 15° 4 MAX. 38 MAX. Fast-on terminals AMP. 280000-1 REF-250 23 MIN. Flexible lead C.S. 35 mm2 (0.054 s.i.) Document Number: 95077 Revision: 19-May-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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