1SS400G Diodes Switching diode 1SS400G zExternal dimensions (Units : mm) zApplications High frequency switching 0.6±0.05 zFeatures 1) Ultra small mold type. (VMD2) 2) High reliability. 0.27±0.03 0.13±0.03 1.0±0.05 3 1.4±0.05 CATHODE MARK 0.5±0.05 zConstruction Silicon epitaxial planar ROHM : VMD2 EIAJ : JEDEC : - zAbsolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage Symbol Limits Unit VRM 90 V DC reverse voltage VR 80 V Peak forward current IFM 225 mA Mean rectifying current IO 100 mA Surge current (1s) Isurge 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 1.2 V IF=100mA Reverse current IR − − 100 nA VR=80V Capacitance between terminals CT − − 3.0 pF VR=0.5V , f=1MHz Reverse recovery time trr − − 4.0 ns VR=6V , IF=10mA , RL=100Ω 1/2 1SS400G Diodes zElectrical characteristic curves (Ta=25°C) 100 10 Ta=75°C Ta=125°C Ta=25°C 1 Ta=−25°C 0.1 0.01 0.001 0 200 400 600 800 1000 Ta=125°C 10 1 CAPACITANCE : Ct (pF) 10 REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 100 Ta=75°C 0.1 Ta=25°C 0.01 0.001 0 20 40 60 80 100 1.0 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Characteristics 30 35 2/2