RB160L-40 Diodes Schottky barrier diode RB160L–40 zExternal dimensions (Units : mm) zApplications High frequency rectification For switching power supply. 3 4.5±0.2 zFeatures 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability 4 0.1 +0.02 −0.1 2.0±0.2 2.6±0.2 ROHM : PMDS EIAJ : − JEDEC : SOD-106 zConstruction Silicon epitaxial Planar , ···· Date of manufacture EX. 1999. 12 →9, C zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current ∗ Peak forward surge current IO 1 A IFSM 70 A Junction temperature Tj Storage temperature Tstg °C 125 −40~+125 °C ∗When mounted on a PCBs board zElectrical characteristics (Ta = 25°C) Parameter 5.0±0.3 1.2±0.3 1.5±0.2 CATHODE MARK Symbol Min. Typ. Max. Unit Conditions Forward voltage VF − − 0.55 V IF = 1.0A Reverse current IR − − 0.1 mA VR = 40V RB160L-40 Diodes zElectrical characteristic curves (Ta = 25°C) 10 CAPACITANCE BETWEEN TERMINALS : CT (F) 10m REVERSE CURRENT : IR (A) 1 125 °C 75°C 25 ° C 100m 10m 1m 0 0.2 0.4 0.6 0.8 100°C 1m 75°C 100µ 50°C 10µ 25°C 100n 0 1.0 Fig. 1 Forward characteristics 20 30 40 50 1n 60 10p 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 2 0.8 DC 1.0 POWER DISSIPATION : Pd (W) FORWARD POWER DISSIPATION : PF (W) 1.2 10 f = 1MHz 100p 1µ FORWARD VOLTAGE : VF(V) 10n sin 0.5 0.3 0.2 0.8 0.1 0.6 D = 0.05 IF 0.4 IO Tp 0.2 0 0 0.4 0.8 1.2 Tp T d= 1.6 2.0 REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : IF (A) 125°C 1 T 2.4 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig. 4 Forward power dissipation characteristics 0 50 100 AMBIENT TEMPERATURE : Ta (°C) Fig. 5 Derating curve 150 20 10 0 5 10 15 20 FORWARD CURRENT : IF (mA) Fig. 6 Reverse recovery time characteristics