1SR156-400 Diodes Rectifier diode 1SR156-400 zExternal dimensions (Units : mm) zApplications High speed rectification 4 1 2 4.5±0.2 2 0.1 +0.02 −0.1 2.0±0.2 2.6±0.2 zConstruction Silicon diffused junction ROHM : PMDS EIAJ : − JEDEC : SOD-106 1 , 2 ···Date code EX. 1999.2→9.2 zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Absolute peak reverse voltage VRSM 500 V Peak reverse voltage VRM 400 V IO 1.0 A Mean rectifying current ∗ IFSM 20 A Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C Peak forward surge current ∗ 60Hz for 1 zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Forward voltage Parameter VF − − 1.3 V IF=0.8A Conditions Reverse current IR − − 10 µA VR=400V Reverse recovery time trr − − 0.4 µs IF=IR=10mA, Irr=1mA 5.0±0.3 zFeatures 1) Small surface mounting type. (PMDS) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability. 1.2±0.3 1.5±0.2 CATHODE MARK 1SR156-400 Diodes zElectrical characteristic curves (Ta = 25°C) 105 1 100m 10m 125°C −25°C 1m 25°C 500 125°C REVERSE RECOVERY TIME : trr (ns) REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (A) 10 104 75°C 103 25°C 102 −25°C 10 75°C 0.1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 1.4 100 FORWARD VOLTAGE : VF (V) SURGE FORWARD CURRENT : IFSM (A) E TIV SIS AN D CA 0 0 AD 0.2 LO AD LO IVE VE CT TI CI DU IN PA AVERAGE RECTIFIED CURRENT : IO (A) RE 0.4 25 50 100 150 10Ω 600 700 200 20 10 P=50% 2 5 10 20 50 100 CYCLES (60 Hz) Fig.5 Maximum peak forward surge current characteristics D.U.T. 10Ω OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit 300 200 100 0 0 5 10 15 20 25 30 Fig.3 Reverse recovery time characteristics 30 0 1 400 FORWARD CURRENT : IF (mA) 40 500Ω PULSE GENERATOR 500 50 AMBIENT TEMPERATURE : Ta (°C) Fig.4 Derating curve 400 Fig.2 Reverse characteristics 1.0 0.6 300 REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics 0.8 200 IR=10mA Irr=1mA 35