ISC 2N6654

Inchange Semiconductor
Product Specification
2N6654
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage capability
・Fast switching speeds
・Low saturation voltage
APPLICATIONS
・Switcing regulators
・Inverters
・Solenoid and relay drivers
・Deflection circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
350
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
20
A
ICM
Collector current-peak
30
A
PT
Total power dissipation
150
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.0
℃/W
Tc=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N6654
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
350
V
V(BR)CBO
Collector-emitter breakdown voltage
IC=1mA ; IE=0
500
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=2A
1.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=3A
2.2
V
Base-emitter saturation voltage
IC=15A; IB=3A
1.8
V
ICEV
Collector cut-off current
VCE=500V;VBE(off)=-1.5V
TC=150℃
0.1
2.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
hFE -2
DC current gain
IC=10A ; VCE=15V
10
VBEsat
2
50
Inchange Semiconductor
Product Specification
2N6654
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3