SavantIC Semiconductor Product Specification 2N5241 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V 5 A 125 W IC Collector current PT Total power dissipation Tj Junction temperature 165 Tstg Storage temperature -65~200 Tc=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.46 /W SavantIC Semiconductor Product Specification 2N5241 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V ICBO Collector cut-off current VCB=400V; IE=0 TC=125 0.2 2.0 mA ICEO Collector cut-off current VCE=400V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=5V 2 400 UNIT 15 V 35 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N5241