Inchange Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 3.5 A 100 W IC Collector current PT Total power dissipation Tj Junction temperature 165 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.0 ℃/W Tc=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=700V; IE=0 TC=125℃ 0.2 2.0 mA ICEO Collector cut-off current VCE=500V; IB=0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V;f=5.0MHz fT 2 500 UNIT V 30 90 2.8 MHz Inchange Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3