Inchange Semiconductor Product Specification 2N6702 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current(peak) 10 A IB Base current 6 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6702 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.01A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.5 V VBE sat Base-emitter saturation voltage IC=5A;IB=0.5A 1.5 V ICEV Collector cut-off current VCE=140V;VBE=1.5V TC=125℃ 0.1 1.0 mA IEBO Emitter cut-off current VBE=7V; IC=0 0.1 mA hFE-1 DC current gain IC=0.2A ; VCE=2V 30 hFE-2 DC current gain IC=5A ; VCE=2V 20 Cob Output capacitance IE=0 ; f=0.1MHz,VCB=10V 50 150 pF fT Transition frequency IC=0.5A ; VCE=10V 50 200 MHz 2 90 UNIT V Inchange Semiconductor Product Specification 2N6702 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3