JMNIC 2N6833

JMnic
Product Specification
2N6833
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Hihg voltage,high speed
APPLICATIONS
・Switching regulators
・Inverters
・Solenoid and relay drivers
・Motor controls
・Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
4
A
IBM
Base current-peak
8
A
PT
Total power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
1.56
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
2N6833
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=1.5A;IB=0.15A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=3A;IB=0.4A
TC=100℃
2.5
2.5
V
VBE sat
Base-emitter saturation voltage
IC=3A;IB=0.4A
TC=100℃
1.5
1.5
V
ICEV
Collector cut-off current
VCE=850V;VBE=-1.5V
TC=105℃
0.25
1.5
mA
IEBO
Emitter cut-off current
VBE=6V; IC=0
1.0
mA
hFE-1
DC current gain
IC=3A ; VCE=5V
7.5
hFE-2
DC current gain
IC=5A ; VCE=5V
5
Cob
Output capacitance
IE=0 ; f=1kHz,VCB=10V
20
200
pF
fT
Transition frequency
IC=0.25A ; VCE=10V;f=10MHz
15
75
MHz
2
MIN
TYP.
MAX
450
UNIT
V
30
JMnic
Product Specification
2N6833
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3