JMnic Product Specification 2N6833 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Hihg voltage,high speed APPLICATIONS ・Switching regulators ・Inverters ・Solenoid and relay drivers ・Motor controls ・Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 4 A IBM Base current-peak 8 A PT Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification 2N6833 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=3A;IB=0.4A TC=100℃ 2.5 2.5 V VBE sat Base-emitter saturation voltage IC=3A;IB=0.4A TC=100℃ 1.5 1.5 V ICEV Collector cut-off current VCE=850V;VBE=-1.5V TC=105℃ 0.25 1.5 mA IEBO Emitter cut-off current VBE=6V; IC=0 1.0 mA hFE-1 DC current gain IC=3A ; VCE=5V 7.5 hFE-2 DC current gain IC=5A ; VCE=5V 5 Cob Output capacitance IE=0 ; f=1kHz,VCB=10V 20 200 pF fT Transition frequency IC=0.25A ; VCE=10V;f=10MHz 15 75 MHz 2 MIN TYP. MAX 450 UNIT V 30 JMnic Product Specification 2N6833 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3