Inchange Semiconductor Product Specification 2N5989 2N5990 2N5991 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986/5987/5988 ・Low collector saturation voltage APPLICATIONS ・Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 半导 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO PARAMETER D N O IC 2N5989 Collector-base voltage 2N5990 Open emitter M E S E 2N5991 VCEO VEBO ANG INCH Collector-emitter voltage R O T UC CONDITIONS 2N5989 2N5990 Open base 2N5991 Emitter-base voltage VALUE UNIT 60 80 V 100 40 60 V 80 Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A IB Base current 4 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5989 2N5990 2N5991 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5989 VCEO(SUS) Collector-emitter sustaining voltage 2N5990 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 V 60 80 2N5991 VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.8A 1.7 V Base-emitter saturation voltage IC=12A; IB=1.8A 2.5 V Base-emitter on voltage IC=6A ; VCE=2V 1.4 V 2.0 mA 0.2 2.0 mA 1.0 mA VBEsat VBE 2N5989 ICEO ICEX 导体 半 电 Collector cut-off current 固 VCE=20V; IB=0 2N5990 VCE=30V; IB=0 2N5991 VCE=40V; IB=0 Collector cut-off current R O T UC OND VCE=RatedVCE;VBE=-1.5V TC=125℃ DC current gain IC M E ES IC=1.5A ; VCE=2V 40 hFE-2 DC current gain IC=6A ; VCE=2V 20 hFE-3 DC current gain IC=12A ; VCE=2V 7.0 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz IEBO Emitter cut-off current hFE-1 G N A CH IN VEB=5V; IC=0 2 120 300 2.0 pF MHz Inchange Semiconductor Product Specification 2N5989 2N5990 2N5991 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3