ISC 2N5990

Inchange Semiconductor
Product Specification
2N5989 2N5990 2N5991
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2N5986/5987/5988
・Low collector saturation voltage
APPLICATIONS
・Designed for use in general purpose
power amplifier and switching circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
半导
Absolute maximum ratings(Ta=℃)
固电
SYMBOL
VCBO
PARAMETER
D
N
O
IC
2N5989
Collector-base voltage
2N5990
Open emitter
M
E
S
E
2N5991
VCEO
VEBO
ANG
INCH
Collector-emitter voltage
R
O
T
UC
CONDITIONS
2N5989
2N5990
Open base
2N5991
Emitter-base voltage
VALUE
UNIT
60
80
V
100
40
60
V
80
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5989 2N5990 2N5991
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5989
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5990
MIN
TYP.
MAX
UNIT
40
IC=0.2A ;IB=0
V
60
80
2N5991
VCEsat-1
Collector-emitter saturation voltage
IC=6A ;IB=0.6A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=12A; IB=1.8A
1.7
V
Base-emitter saturation voltage
IC=12A; IB=1.8A
2.5
V
Base-emitter on voltage
IC=6A ; VCE=2V
1.4
V
2.0
mA
0.2
2.0
mA
1.0
mA
VBEsat
VBE
2N5989
ICEO
ICEX
导体
半
电
Collector cut-off current
固
VCE=20V; IB=0
2N5990
VCE=30V; IB=0
2N5991
VCE=40V; IB=0
Collector cut-off current
R
O
T
UC
OND
VCE=RatedVCE;VBE=-1.5V
TC=125℃
DC current gain
IC
M
E
ES
IC=1.5A ; VCE=2V
40
hFE-2
DC current gain
IC=6A ; VCE=2V
20
hFE-3
DC current gain
IC=12A ; VCE=2V
7.0
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
IEBO
Emitter cut-off current
hFE-1
G
N
A
CH
IN
VEB=5V; IC=0
2
120
300
2.0
pF
MHz
Inchange Semiconductor
Product Specification
2N5989 2N5990 2N5991
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3