ISC 2N6108

Inchange Semiconductor
Product Specification
2N6106 2N6108 2N6110
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・With short pin
APPLICATIONS
・Power amplifier and switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
体
导
电半
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
PARAMETER
固
CONDITIONS
2N6106
Collector-base voltage
2N6108
2N6110
VCEO
VEBO
CHA
Collector-emitter voltage
IN
Emitter-base voltage
2N6108
UNIT
-40
N
O
C
EMI
Open emitter
NG S
2N6106
R
O
T
DUC
VALUE
Open base
2N6110
-60
V
-80
-30
-50
V
-70
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
IB
Base current
-3
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N6106 2N6108 2N6110
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6106
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6108
VBE
ICEO
ICEX
IEBO
hFE-1
TYP.
MAX
UNIT
-30
IC=-0.1A ;IB=0
2N6110
VCEsat
MIN
V
-50
-70
Collector-emitter saturation voltage
IC=-7A;IB=-3A
-3.5
V
Base-emitter on voltage
IC=-7A ; VCE=-4V
-3.0
V
-1.0
mA
Collector cut-off current
2N6106
VCE=-20V; IB=0
2N6108
VCE=-40V; IB=0
2N6110
VCE=-60V; IB=0
2N6106
VCE=-40V; VBE=1.5V
VCE=-30V; BE=1.5V,TC=125℃
2N6108
VCE=-60V; VBE=1.5V
VCE=-50V; BE=1.5V,TC=125℃
2N6110
VCE=-80V; VBE=1.5V
VCE=-70V; BE=1.5V,TC=125℃
体
导
电半
固
Collector cut-off current
N
O
C
EMI
S
G
N
HA
Emitter cut-off current
-0.1
-2.0
R
O
T
DUC
-0.1
-2.0
-0.1
-2.0
VEB=-5V; IC=0
INC
2N6106
IC=-2A ; VCE=-4V
DC current gain
2N6108
IC=-2.5A ; VCE=-4V
2N6110
IC=-3A ; VCE=-4V
hFE-2
DC current gain
IC=-7A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-4V;f=1MHz
2
mA
-1.0
30
mA
150
2.3
250
10
pF
MHz
Inchange Semiconductor
Product Specification
2N6106 2N6108 2N6110
Silicon PNP Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
R
O
T
DUC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3