Inchange Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・With short pin APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 体 导 电半 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 固 CONDITIONS 2N6106 Collector-base voltage 2N6108 2N6110 VCEO VEBO CHA Collector-emitter voltage IN Emitter-base voltage 2N6108 UNIT -40 N O C EMI Open emitter NG S 2N6106 R O T DUC VALUE Open base 2N6110 -60 V -80 -30 -50 V -70 Open collector -5 V IC Collector current -7 A ICM Collector current-peak -10 A IB Base current -3 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6106 VCEO(SUS) Collector-emitter sustaining voltage 2N6108 VBE ICEO ICEX IEBO hFE-1 TYP. MAX UNIT -30 IC=-0.1A ;IB=0 2N6110 VCEsat MIN V -50 -70 Collector-emitter saturation voltage IC=-7A;IB=-3A -3.5 V Base-emitter on voltage IC=-7A ; VCE=-4V -3.0 V -1.0 mA Collector cut-off current 2N6106 VCE=-20V; IB=0 2N6108 VCE=-40V; IB=0 2N6110 VCE=-60V; IB=0 2N6106 VCE=-40V; VBE=1.5V VCE=-30V; BE=1.5V,TC=125℃ 2N6108 VCE=-60V; VBE=1.5V VCE=-50V; BE=1.5V,TC=125℃ 2N6110 VCE=-80V; VBE=1.5V VCE=-70V; BE=1.5V,TC=125℃ 体 导 电半 固 Collector cut-off current N O C EMI S G N HA Emitter cut-off current -0.1 -2.0 R O T DUC -0.1 -2.0 -0.1 -2.0 VEB=-5V; IC=0 INC 2N6106 IC=-2A ; VCE=-4V DC current gain 2N6108 IC=-2.5A ; VCE=-4V 2N6110 IC=-3A ; VCE=-4V hFE-2 DC current gain IC=-7A ; VCE=-4V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-0.5A ; VCE=-4V;f=1MHz 2 mA -1.0 30 mA 150 2.3 250 10 pF MHz Inchange Semiconductor Product Specification 2N6106 2N6108 2N6110 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA R O T DUC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3