ISC BUV27A

Inchange Semiconductor
Product Specification
BUV27A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Low collector saturation voltage
・Fast switching speed
APPLICATIONS
・For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
12
A
ICM
Collector current (peak)
20
A
IB
Base current
4
A
IBM
Base current (peak)
6
A
Ptot
Total power dissipation
85
W
175
℃
-65~175
℃
MAX
UNIT
1.76
℃/W
Tj
Tstg
TC=25℃
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
BUV27A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2 A ;IB=0;L=25mH
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1
Collector-emitter saturation voltage
VCEsat-2
MIN
TYP.
MAX
150
V
30
V
IC=4A ;IB=0.4 A
0.7
V
Collector-emitter saturation voltage
IC=7A; IB=0.7A
1.5
V
Base-emitter saturation voltage
IC=7A; IB=0.7A
2
V
ICEX
Collector cut-off current
VCE =300V;VBE = -1.5 V
TC=125℃
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
VBEsat
2
7
UNIT
Inchange Semiconductor
Product Specification
BUV27A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3