JMnic Product Specification 2SA1644 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V -5 A -10 A -3 A IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation PW≤300μs, duty cycle≤10% Ta=25℃ 1.5 TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1644 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat-1 Collector-emitter saturation voltage VCEsat -2 CONDITIONS MAX UNIT IC=-3A; IB=-0.15A -0.3 V Collector-emitter saturation voltage IC=-4A; IB=-0.2A -0.5 V VBE sat -1 Base-emitter saturation voltage IC=-3A; IB=-0.15A -1.2 V VBE sat -2 Base-emitter saturation voltage IC=-4A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.2A ; VCE=-2V 100 hFE-2 DC current gain IC=-1A ; VCE=-2V 100 hFE-3 DC current gain IC=-3A ; VCE=-2V 60 hFE-2 Classifications M L K 100-200 150-300 200-400 2 MIN TYP. 400 JMnic Product Specification 2SA1644 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3